SnO2压敏陶瓷掺杂MnO2的制备和性能研究  

Study on Preparation and Properties of SnO2 Varistor Ceramics Doped with MnO2

作　　者：梁温馨 赵洪峰[1] 康加爽 王昊 周远翔 谢清云 LIANG Wenxin;ZHAO Hongfeng;KANG Jiashuang;WANG Hao;ZHOU Yuanxiang;XIE Qingyun(The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment, School of Electrical Engineering, Xinjiang University, Urumqi 830046,China;Xidian Surge Arrester Co., Ltd., Xi’an 710200,China)

机构地区：[1]新疆大学电气工程学院电力系统及大型发电设备安全控制和仿真国家重点实验室风光储分室,新疆乌鲁木齐830046 [2]西电避雷器有限责任公司,陕西西安710200

出　　处：《压电与声光》2020年第6期810-813,819,共5页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(No.51762038)。

摘　　要：采用MnO2部分替代ZnO的方法固相烧结制备了SnO2-ZnO-Ta2O5基压敏陶瓷。研究了Zn,Mn共同掺杂对SnO2微观结构和电学性能的影响,发现少量Mn的替代掺杂可以改善SnO2压敏陶瓷的非线性并显著提高其电压梯度。当MnO2的摩尔分数为0.25%时,样品的非线性达到了21.37,电压梯度为422 V/mm,泄漏电流为72.12μA/cm^2。造成这种变化的主要原因是Mn补充了SnO2晶格中ZnO原有的不溶部分,通过固溶反应产生了受主缺陷离子Mn″Sn,增大了受主浓度,促进了势垒的形成。同时,Mn在SnO2晶格中的溶解度较低,容易在晶界层析出,阻碍晶粒生长,增加了电压梯度。The SnO2-ZnO-Ta2O5 based varistor ceramics was prepared by partial replacement of ZnO with MnO2.The effects of Zn and Mn co-doping on the microstructure and electrical properties of SnO2 were investigated.The experimental results showed that the substitution of ZnO with a small amount of MnO2 could improve the nonlinear performance of the samples and significantly increase the voltage gradient.When the MnO2 doping amount was 0.25%,the nonlinearity of the sample reaches 21.37,the voltage gradient was 422 V/mm,and the leakage current was 72.12μA/cm^2.The main reason for the change was that Mn supplements the original insoluble portion of ZnO in the SnO2 lattice,and undergoes the solid solution reaction to generate the acceptor defect ion Mn″Sn,which promotes the formation of the potential barrier.At the same time,Mn has low solubility in SnO2 lattice,so it was easy to segregate and precipitate on grain boundary layer,which hinders grain growth and increases voltage gradient.

关 键 词：SnO2压敏陶瓷 泄漏电流 电压梯度 微观结构 肖特基势垒 

分 类 号：TN384[电子电信—物理电子学] TM28[一般工业技术—材料科学与工程]