基于LN/LT-POI多层结构的SAW器件发展  

Development of SAW Devices on LN/LT-POI Multilayered Structure

作　　者：何杰[1] 马晋毅[1] 胡少勤[1] 许昕[1] HE Jie;MA Jinyi;HU Shaoqin;XU Xin(The 26th Institute of China Electronics Technology Group Corporation, Chongqing 400060, China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2020年第6期864-870,874,共8页Piezoelectrics & Acoustooptics

摘　　要：绝缘体上压电单晶薄膜结构材料(POI)为研制高性能、可集成的声表面波(SAW)器件提供了新的解决途径和方案,可满足射频(RF)前端在集成化、小型化发展趋势下对新一代压电声学器件的需求。该文介绍了POI的制备工艺技术。总结了基于铌酸锂/钽酸锂-POI(LN/LT-POI)多层结构的高性能SAW器件的最新研究成果,并展望了其未来的发展。The piezoelectric-on-insulator film structure material(POI)can provide a breakthrough solution approach and scheme for developing integrated SAW devices with high performance,which can meet the urgent needs of the integration,miniaturization,high frequency and wide bandwidth of the next generation of piezoelectric acoustic devices under the development trend of RF front-end integration and miniaturization.In this paper,the fabricating technique of the POI.The latest research results of high performance SAW devices on LN/LT-POI structure are summarized,and its future development is prospected.

关 键 词：绝缘体上压电单晶薄膜结构材料(POI) 声表面波(SAW)器件 5G无线通信 射频前端 键合剥离 

分 类 号：TN384[电子电信—物理电子学] TM22[一般工业技术—材料科学与工程]