紫外激光波长(266nm)多孔二氧化硅减反膜  

Porous Silica Antireflective Film at Ultraviolet Laser Wavelength(266 nm)

作　　者：沈斌[1] 熊怀[1] 张旭[1] 李海元[1] Bin Shen;Huai Xiong;Xu Zhang;Haiyuan Li(Key Laboratory of High Power Laser and Physics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China)

机构地区：[1]中国科学院上海光学精密机械研究所高功率激光物理重点实验室,上海201800

出　　处：《光学学报》2020年第22期164-170,共7页Acta Optica Sinica

基　　金：中国科学院战略性先导科技专项A类(XDA25020305)。

摘　　要：以正硅酸乙酯作为前驱体,乙醇作为溶剂,氨水作为催化剂,在碱催化体系下制备了高分散的SiO2溶胶;然后采用提拉法在不同浓度的SiO2溶胶涂膜液中制备了四倍频266 nm波长增透的SiO2减反膜,并对各膜层的性能进行了测试。测试结果表明:在浓度最大的SiO2溶胶中以4.5 cm·min-1的提拉速度制备得到的四倍频SiO2减反膜的性能最优,其在266 nm处的透过率达到了99.307%,表面粗糙度为1.339 nm,且透过率稳定性优异。Highly dispersed silica(SiO2)sol was prepared in a basic catalyst system using tetraethoxysilane,ethanol,and ammonium hydroxide as the precursor,solvent,and catalyst,respectively.SiO2 antireflective films with fourth harmonic generation antireflection at 266 nm were prepared by dip coating each film in different concentrations of SiO2 sol,and the properties of the as-prepared film were determined.Results show that the fabricated film pulled up at a speed of 4.5 cm·min-1 from the highest concentration SiO2 sol exhibited the best performance.The film was characterized by a maximum transmittance of 99.307%at 266 nm,surface roughness of 1.339 nm,and excellent stability.

关 键 词：材料 溶胶凝胶 减反膜 二氧化硅 四倍频 

分 类 号：O484.4[理学—固体物理]