Local probe of the interlayer coupling strength of few-layers SnSe by contact-resonance atomic force microscopy  

作　　者：Zhi-Yue Zheng Yu-Hao Pan Teng-Fei Pei Rui Xu Kun-Qi Xu Le Lei Sabir Hussain Xiao-Jun Liu Li-Hong Bao Hong-Jun Gao Wei Ji Zhi-Hai Cheng 

机构地区：[1]State Key Laboratory of Digital Manufacturing Equipment and Technology,School of Mechanical Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China [2]Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-nano Devices,Department of Physics,Renmin University of China,Beijing 100872,China [3]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [4]Key Laboratory of Inorganic Functional Materials and Devices,Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China [5]CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center for Excellence in Nanoscience,National Center for Nano science and Technology,Beijing 100190,China [6]University of Chinese Academy of Sciences,Beijing 100049,China [7]China North Vehicle Research Institute,Beijing,China

出　　处：《Frontiers of physics》2020年第6期105-113,共9页物理学前沿（英文版）

基　　金：This project was supported by the Min-istry of Science and Technology(MOST)of China(Grant Nos.2016YFA0200700 and 2018YFE0202700);the National Natural Science Foundation of China(NSFC)(Grant Nos.21622304,61674045,11604063,11622437,11974422,61911540074,11804247,and 61674171);Strategic Priority Research Program,Key Research Program of Frontier Sciences,and Instrument Developing Project of Chinese Academy of Sciences(CAS)(Grant Nos.XDB000000,QYZDB-SSW-8Y5031,and YZ201418);Z.H.Cheng was supportod by Distinguished Technical Talents Project and Youth Innovation Promotion Association CAS,Fundamental Research Funds for the Central Universities,and Research Funds of Renmin University of China(Grant Nos.18XNLG01 and 19XNQ025);Calculations were performed at the Physics Lab of High-Performance Computing of Renmin University of China and Shanghal Supercomputer Center.

摘　　要：The interlayer bonding in two-dimensional(2D)materials is particularly important because it is not only related to their physical and chemical stability but also afects their mechanical,thermal,elec-tronic,optical,and other properties.To address this issue,we report the direct characterization of the interlayer bonding in 2D SnSe using contact-resonance atomic force microscopy(CR-AFM)in.this study.Site-specific CR spectroscopy and CR force spectroscopy measurements are performed on both SnSe and its supporting SiO2/Si substrate comparatively.Based on the cantilever and contact mechanic models,the contact stifness and vertical Young's modulus are evaluated in comparison with SiO2/Si as a reference material.The interlayer bonding of SnSe is further analyzed in combination with the semi-analytical model and density functional theory calculations.The direct characteriza-tion of interlayer interactions using this non-destructive methodology of CR-AFM would facilitate a better understanding of the physical and chemical properties of 2D layered materials,specifically for interlayer intercalation and vertical heterostructures.

关 键 词：2D materials interlayer bonding contact-resonance atomic force microscopy density functional theory 

分 类 号：TH742[机械工程—光学工程]