CMOS工艺节点进展中器件技术的革新  

Innovations of device technology for CMOS scaling

作　　者：裴志军[1] PEI Zhi-jun(School of Electronic Engineering,Tianjin University of Technology and Education,Tianjin 300222,China)

机构地区：[1]天津职业技术师范大学电子工程学院,天津300222

出　　处：《天津职业技术师范大学学报》2020年第4期19-24,共6页Journal of Tianjin University of Technology and Education

摘　　要：随着CMOS工艺技术的飞速发展,传统MOSFET器件的结构尺寸持续微缩,各种短沟道相关效应对器件性能的影响越来越严峻。在CMOS工艺节点演进中,为了减小短沟道效应的影响,改善器件性能,需要新技术、新材料以及器件结构的革新。文章回顾了应变硅技术、高K电介质、金属栅的应用,并探讨了对传统平面晶体管的器件结构革新,特别是创新的三维器件结构,包括鳍式场效应晶体管FinFET、环绕栅场效应晶体管GAAFET等。分析表明:FinFET结构中,栅极从三面围绕沟道而进行有效控制,可获得较小的亚阈值漏电及低功耗。而GAAFET结构中,栅极环绕沟道具有比FinFET更优异的性能,能够适用于下一代更先进的CMOS工艺节点。With the rapid development of CMOS process technology,the traditional MOSFET structure has suffered from various short channel effects with continuous scaling of transistors.In order to minimize the short channel effects for the improvement of device performances,the innovations of new materials,new technologies,and new device structures,are required in advanced CMOS technology nodes.A review is made on strained silicon,high K dielectric,and metal gate technology.Then the changes from traditional planer transistor to new device structures are discussed,which consists of silicon-on-insulator FET(SOIFET)and 3D transistors,such as fin field effect transistor(FinFET),gate-all-around FET(GAAFET).For the FinFET structure,the gate is wrapped around the channel providing excellent control from three sides of the channel,which can result in lower subthreshold leakage,hence lower power.As for the GAAFET structure,better performance over FinFET should be obtained due to the presence of the gate on all sides of the channel.GAAFET is shown to be the potential candidate for next advanced CMOS node.

关 键 词：场效应晶体管(FET) MOS场效应晶体管(MOSFET) 短沟道效应 SOI场效应晶体管(SOIFET) 鳍式场效应晶体管(FinFET) 环绕栅场效应晶体管(GAAFET) 

分 类 号：TN432[电子电信—微电子学与固体电子学]