Pt/Nb:SrTiO3肖特基结的电阻变换效应和光响应特性  

Resistive Switching and Light Response Characteristics of the Pt/Nb:SrTiO3 Schottky Junction

作　　者：谢帅 李美亚[2] 张源 XIE Shuai;LI Meiya;ZHANG Yuan(School of Information Engineering,Hubei University for Nationalities,Enshi 445000,Hubei,China;School of Physics and Technology,Wuhan University,Wuhan 430072,Hubei,China)

机构地区：[1]湖北民族大学信息工程学院,湖北恩施445000 [2]武汉大学物理科学与技术学院,湖北武汉430072

出　　处：《武汉大学学报（理学版）》2020年第6期552-560,共9页Journal of Wuhan University:Natural Science Edition

基　　金：湖北省教育厅青年人才项目(Q20181903);湖北省高等学校优秀中青年科技创新团队项目(T201712)。

摘　　要：制备了Pt/Nb:SrTiO3肖特基结,测试了该器件的电阻变换和光响应特性。该器件的最大阻变(resistive switching,RS)倍率达到1.1×106,有较好的翻转和保持性能,并且具有多级存储特性。对器件施加紫色(405 nm)和红色(650 nm)激光光照,可观察到明显的光响应特性,特别是器件在高阻态下的光响应具有显著的开关特性。实现了光照对Pt/Nb:SrTiO3器件阻变的调控以及电压对器件光响应的调控。对实验结果的分析表明,Pt/Nb:SrTiO3的阻变以及光响应现象来源于Pt/Nb:SrTiO3界面肖特基势垒及附近缺陷对电子的束缚/解束缚。该器件在多级阻变存储器以及多功能光电传感器中有潜在的应用价值。We prepared Pt/Nb:SrTiO3 Schottky junction and tested the resistive switching(RS)and light response behaviors of this device.The device has a maximum RS ratio of 1.1×106,good switching and retention performances,and multilevel memory characteristics.Obvious light response and significant light switching characteristics at high resistance state were observed under the violet(405 nm)and red(650 nm)laser light.Both light-controlled RS and voltage-controlled light response are demonstrated in this device,which can be attributed to the Schottky barrier of Pt/Nb:SrTiO3 interface and the electrons trapping/de-trapping by defects near the interface.Our work demonstrates the feasibility for making multilevel RS memories and using in multifunctional photoelectric sensors.

关 键 词：电阻变换 光响应 肖特基结 载流子束缚/解束缚 

分 类 号：O469[理学—凝聚态物理]