双极器件LPNP辐照损伤效应的并行有限元数值模拟  

Parallel Finite Element Simulations on Radiation Damage Effects of Lateral PNP BJTs

作　　者：王芹 马召灿 李鸿亮 张林波 卢本卓[1,2] Wang Qin;Ma Zhaocan;Li Hongliang;Zhang Linbo;Lu Benzhuo(LSEC,NCMIS,Imstitute of Computational Mathematics and ScientifieEngineerimg Computimg,Academy of Mathematics and Systems Science,Chinese Academy of Sciences,Beijing 100190,China;School of Mathematical Sciences,University of Chinese Academy of Sciences,Beijineg 100049,China;Derpartment of Mathematics,Sichuan Normal University,Chengdu 610066,China)

机构地区：[1]LSEC,国家数学与交叉科学中心,中国科学院数学与系统科学研究院,计算数学与科学工程计算研究所,北京100190 [2]中国科学院大学数学科学学院,北京100049 [3]四川师范大学数学科学学院,成都610066

出　　处：《系统仿真学报》2020年第12期2376-2382,共7页Journal of System Simulation

基　　金：科学挑战专题(TZ2016003);国家重点研发计划(2016YFB0201304);国家自然科学基金(21573274,11771435)。

摘　　要：在基于漂移扩散模型的半导体器件仿真模拟中,采用Zlamal有限元方法进行数值离散,结合提出的电离损伤耦合模型,对横向PNP(LPNP)双极晶体管(BJT,bipolar junction transistors)的电离损伤效应进行模拟。基于三维并行自适应有限元软件平台PHG(Parallel Hierarchical Grid)实现了模型和算法,并通过数值计算的方式成功模拟出了LPNP受电离辐射影响后出现的基极电流增大及电流增益退化的现象。进行了网格规模达1亿单元、并行规模达1024进程的大规模数值实验,展示了算法良好的并行可扩展性。The Zlamal finite element discretization is applied in the drift-diffusion model for the simulations of semiconductor devices.Combined with the coupled ionization damage model,the ionization damage effects of lateral PNP(LPNP)bipolar junction transistors(BJT)are simulated.The model and algorithm are implemented based on the three-dimensional parallel adaptive finite element toolbox PHG(Parallel Hierarchical Grid).The phenomena of excess base current and current gain degradation in LPNP BJTs are successfully simulated via numerical calculation.A large-scale numerical experiment with 100 million elements and 1024 MPI processes is carried out,demonstrating the good parallel scalability of the algorithm.

关 键 词：Zlamal有限元 辐照损伤效应 LPNP晶体管 并行数值模拟 

分 类 号：TP391.9[自动化与计算机技术—计算机应用技术]