HgCdTe反型层中自旋轨道耦合、塞曼效应及界面粗糙涨落效应研究  

Spin-orbit coupling and Zeeman effect in HgCdTe inversion layer with interface microroughness

作　　者：涂华垚 吕蒙[1] 张松然 俞国林[1] 孙艳[1] 康亭亭[1] 陈鑫[1] 戴宁[1] TU Hua-Yao;LYU Meng;ZHANG Song-Ran;YU Guo-Lin;SUN Yan;KANG Ting-Ting;CHEN Xin;DAI Ning(State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China;School of Materials Science and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China)

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [2]中国科学院大学,北京100084 [3]上海理工大学材料科学与工程学院,上海200093

出　　处：《红外与毫米波学报》2020年第6期684-689,共6页Journal of Infrared and Millimeter Waves

基　　金：国家重点研发计划(2016YFA0202200);国家自然科学基金(11774367)。

摘　　要：通过实验测量,研究了HgCdTe反型层中自旋轨道耦合、塞曼效应及界面粗糙涨落效应。采用理论模型对不同温度及不同平行磁场下的反弱局域效应进行分析,结果表明,在平行磁场中,界面粗糙涨落效应与塞曼效应均会对HgCdTe反型层的反弱局域效应产生抑制作用。其中,界面粗糙涨落效应表现为产生一个二维电子气法向的弱局域效应,对样品施加平行磁场会首先抑制界面粗糙涨落效应导致的法向弱局域效应,然后才以塞曼效应继续抑制反弱局域效应。通过对参数τ/τϕ与|m^*rg^*3|的分析表明,塞曼效应对反弱局域效应的抑制与温度无关。The spin-orbit coupling interaction,Zeeman effect and interface microroughness effect in an HgCdTe inversion layer were investigated by experimental measurement.Theoretical models were used to analyze the weak antilocalization(WAL)at different temperatures and in different in-plane magnetic fields.It is found that both the Zeeman effect and the interface microroughness effect will suppress the WAL.And the interface microroughness effect takes effect by facilitating a weak localization in the normal direction of the two-dimensional electron gas(2DEG)plane.With the increasing magnetic field,the interface microroughness induced WL will be suppressed first and then the WAL will be suppressed by Zeeman effect.What’s more,the analysis of parametersττϕand|m^*rg^*3|indicates that the Zeeman effect’s suppression on WAL does not depend on temperature.

关 键 词：碲镉汞 自旋轨道耦合 塞曼效应 界面粗糙涨落效应 

分 类 号：O513[理学—低温物理]