L频段GaN内匹配功率放大器研制  

Development of L-band GaN internally-matched power amplifier

作　　者：高岩[1] 江肖力[1] 韩威 兰宝岩 Gao Yan;Jiang Xiaoli;Han Wei;Lan Baoyan(The 54th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050081,China)

机构地区：[1]中国电子科技集团第五十四研究所,石家庄050081

出　　处：《电子测量技术》2020年第20期10-15,共6页Electronic Measurement Technology

摘　　要：针对射频收发前端对功放高效率、大功率的需求,采用内匹配技术,设计并实现了一款工作在0.9~1.1GHz的高功率内匹配放大器。该放大器基于Qorvo公司生产的栅宽5mm的GaN HEMT芯片,利用晶体管厂家提供的器件模型,通过使用Microwave office软件进行大信号负载牵引和源牵引仿真,得到使用频段内的最佳源阻抗值和负载阻抗值;进行了匹配电路设计,并对利用理论计算与使用Microwave office软件实现阻抗匹配进行了较为详细的介绍。加工实测结果表明,在20%相对带宽,漏极电压28V,输入信号为连续波(CW)的条件下,峰值功率大于43.2dBm,功率附加效率大于47%、功率增益大于16dB。显示了GaN功率器件适用于宽带和高功率、高效率的工作性能,应用前景广阔。For the requirements of high power and high efficiency power ampilifier to the RF front-end,the internal matching technology is used to design an 0.9~1.1GHz high power amplifier.The power amplifier was based on a GaN HEMT chip with a gate width of 5mm by Qorvo.Large-signal load pull and source load pull for this PA are simulated by Microwave office software.The matching circuit design is carried out,and the theoretical calculation and the use of AWR software to achieve impedance matching are introduced in more detail.The actual processing results show that the peak output power(Pout)of the power amplifier is more than 43.2dBm,PAE of the designed amplifier is greater than 47%,the power gain is greater than 16dB,when the relative bandwidth is 20%,a drain-source voltage is 28Vand the input signal is continuous wave(CW).The designed device,exhibited with broadband,high-efficiency,high-power performance,has broad prospects for engineering applications.

关 键 词：GAN 功率放大器 内匹配 Microwave office 

分 类 号：TN722[电子电信—电路与系统]