9~15 GHz GaAs MMIC宽带高效率功率放大器  

9~15 GHz GaAs MMIC wideband high efficiency power amplifier

作　　者：徐鼎 陈晓娟[1] 胡俊 袁婷婷[1] XU Ding;CHEN Xiaojuan;HU Jun;YUAN Tingting(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学,北京100049

出　　处：《电子设计工程》2021年第1期24-29,共6页Electronic Design Engineering

基　　金：国家科技重大专项(2016ZX03001006)。

摘　　要：基于0.15μm栅长GaAs E-PHEMT工艺,设计了一款可应用于X波段和Ku波段的宽带高效率功率放大器。针对二次谐波会明显降低功率放大器效率的问题,采用四分之一波长微带线组成输出端偏置网络,将二次谐波短接到地,有效地提高了功率附加效率;通过分析匹配网络级数对宽带匹配的影响,输出匹配电路采用电容微带线组成的两级电抗网络实现低Q值匹配,拓展了电路的宽带特性。测试结果表明,该放大器在9~15 GHz工作频率内,连续波饱和输出功率大于28 dBm,功率附加效率为35%~45%,功率回退至19 dBm下时,IMD3小于-34 dBc,该MMIC尺寸为2.34 mm*1.25 mm。Based on 0.15μm GaAs E⁃PHEMT technology,a GaAs wideband power amplifier MMIC for X and Ku band was developed.In view of the problem that the second harmonic wave can reduces efficiency of the power amplifier evidently,a output bias network consisting of quarter⁃wave microstrip line was applied to short the the second harmonic wave and thus improve the efficiency;By analyzing the influence of the stages of match network on wideband characteristics,The output matching circuit used a low two⁃stage reactive matching of the capacitor and the microstrip line to broaden the wideband performance of the circuit.The measurement results exhibited that at the frequency of 9~15 GHz,the saturated output power of the continuous wave was greater than 28 dBm while the power⁃added efficiency was about 35%~45%over the same frequency range.The IMD3 was less than-34 dBc when the power is back to 19 dBm.The size of MMIC was 2.34 mm*1.25 mm.

关 键 词：GaAs PHEMT工艺 高效率功率放大器 谐波抑制 宽带匹配 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75[电子电信—电路与系统]