碳化硅MOSFET开关瞬态模型  

Transient model of Silicon Carbide MOSFET switch

作　　者：夏逸骁 陶雪慧 XIA Yixiao;TAO Xuehui(The College of Rail Transport,Soochow University,Suzhou 215000,China)

机构地区：[1]苏州大学轨道交通学院,江苏苏州215000

出　　处：《电子设计工程》2021年第1期152-156,共5页Electronic Design Engineering

摘　　要：在碳化硅MOSFET大范围应用下,其开关瞬态过程愈发引人关注。由于碳化硅比起硅器件有更高的开关频率,因此其开关特性受到结电容和杂散电感的影响。对碳化硅MOSFET开关过程进行瞬态分析,推导了它的开关模型。通过开关模型提取出其电压变化率和电流变化率,在考虑杂散参数的基础之上寻找其与电压及电流变化率之间的联系。仿真及实验通过搭建buck电路平台,测试其开通和关断波形,提取出开关过程各阶段电压电流的变化率,进一步验证理论分析过程和模型建立的准确性。In the wide range of applications of silicon carbide MOSFET,the switching transient process is becoming more and more interesting.Because Silicon Carbide has a higher switching frequency than Silicon devices,its switching characteristics are affected by junction capacitance and stray inductance.In this paper,a transient analysis of the switching process of a silicon carbide MOSFET is performed,and its switching model is derived.The voltage change rate and the current change rate are extracted through the switch model,and the relationship between the voltage change rate and the current and current change rate is sought after considering the stray parameters.Simulation and experiment by building a buck circuit platform and testing its turn⁃on and turn⁃off waveforms,the change rate of voltage and current at each stage of the switching process is extracted to further verify the accuracy of the theoretical analysis process and model establishment.

关 键 词：碳化硅MOSFET 开关模型 电压电流变化率 杂散参数 

分 类 号：TN7[电子电信—电路与系统]