用于甚低频无线通信的一种低噪声放大器设计  

Design of a LNA for ULF wireless communication

作　　者：张孟文 金玉丰[1] Zhang Mengwen;Jin Yufeng(Peking University Shenzhen Graduate School,Shenzhen 518055,China;Goodix Technology Co.,Shenzhen 518045,China)

机构地区：[1]北京大学深圳研究生院,广东深圳518055 [2]深圳市汇顶科技股份有限公司,广东深圳518045

出　　处：《电子技术应用》2021年第1期46-51,56,共7页Application of Electronic Technique

摘　　要：介绍了一种用于甚低频无线通信中的低噪声放大器的设计。提出了一个由低通跨导与自共源共栅MOSFET形成的新环路,用于稳定放大器的输出偏置电压。该环路配合恒定跨导偏置电路,可使放大器的开环增益保持在40 dB左右,不会受到工艺偏差、电源电压波动和工作温度变化的影响。该放大器中自共源共栅MOSFET作为增益单元,配合全差分电流偏置电路,输出范围可达到轨到轨。此放大器具有高达101.4 dB的带内电源抑制比。当可穿戴设备采用高阻抗电源供电时,电源纹波对输出信号几乎无影响。This paper introduces the design of low noise amplifier,using for ultra-low frequency.There′s a new loop in the paper,formed by a low-pass transconductance and a self-cascode MOSFET,proposed to stabilize the output bias voltage of the amplifier.By using the loop with the constant transconductance bias circuit,the open-loop gain of the amplifier is constant at about 40 dB.It does not vary with the supply voltage,process and temperature.In the amplifier,a self-cascode MOSFET is used as a gain unit to enable the amplifier output range to reach rail to rail,with the use of full differential current bias.This amplifier has a remarkable in-band high-power supply rejection ratio,up to 101.4 dB.The power ripple has almost no effect on the output signal,when the wearable devices are powered by high impedance sources.

关 键 词：甚低频 低噪声放大器 高电源抑制比 恒定开环增益 输出轨到轨 

分 类 号：TN432[电子电信—微电子学与固体电子学]