硅掺杂碳靶材的制备及溅射薄膜生长模式分析  

Preparation of Silicon Doped Carbon Target and the Growth Mode of Thin Film by Sputtering

作　　者：白雪 刘宇阳 王星奇 桂涛 杨磊 王星明 储茂友 Bai Xue;Liu Yuyang;Wang Xingqi;Gui Tao;Yang Lei;Wang Xingming;Chu Maoyou(GRINM Resources and Environment Tech.Co.,Ltd,Beijing 100088,China)

机构地区：[1]有研资源环境技术研究院(北京)有限公司,北京100088

出　　处：《稀有金属材料与工程》2020年第12期4207-4214,共8页Rare Metal Materials and Engineering

基　　金：有研科技集团有限公司青年基金(13161)。

摘　　要：以石墨、碳化硅、硅粉体为原料,采用预处理工艺得到复合原料粉体,热压烧结制备C/Si 80/20 at%靶材。将制备的靶材在不同基片上溅射镀膜,分析薄膜的形貌及其生长模式。通过扫描电镜观察微观形貌、四探针测试电阻率、XRD结合拉曼光谱分析晶体结构,结果如下:(1)石墨和硅粉球磨混合48 h可获得Si元素均匀分布的C/Si复合粉体;该粉体在1900℃下真空热处理时,C/Si通过互扩散生成等轴晶3C-SiC;(2)不同粒径的β-SiC粉体在1900℃真空热处理时,颈部生长速率和晶体结构转变存在显著差异。在高温下,纳米β-SiC粉体蒸气压高,颈部增长速率快,通过蒸发-凝聚再结晶后可获得球形度良好的3C-SiC微米颗粒;(3)以C/Si/SiC 70/10/10 at%及C/Si 60/20 at%2种粉体为原料,采用球磨和高温真空热处理得到预处理粉体并热压制备C/Si 80/20 at%靶材,结果表明:与C/SiC 60/20 at%二元组分体系相比,三元组分预处理粉体制备靶材的均匀性好,平均电阻率3.9 mΩ·cm,极差0.59 mΩ·cm,密度2.35 g/cm^3,石墨化度0.17,石墨晶体完整性好;(4)将制备的C/Si80/20at%靶材分别在硅片、玻璃以及陶瓷基片上磁控溅射制备类金刚石薄膜,结果发现:在Si基体表面薄膜呈纵向生长模式,膜层微粒小于20nm;在玻璃基体表面膜层呈层状生长模式且结合紧密;在陶瓷基体表面薄膜呈片状生长模式,膜层由微米级颗粒结合组成,与陶瓷基体的微观组织相似。The composite raw material powder was prepared using carbon,silicon carbide and silicon as raw material by pretreatment process in order to prepare C/Si 80/20 at%target via hot-pressing.The target material was then sputtered on different substrates.The morphology was analyzed by SEM;the resistivity was measured by four probes;the crystal structure was examined by XRD combin ed with Raman spectroscopy.The results show that:(1)C/Si powder of uniformly distributed Si element is obtained after consistent ball milling for 48 h.When the powders are vacuum heat-treated at 1900℃,liquid silicon and solid carbon generate equiaxed 3 C-SiC through inter-diffusion;(2)whenβ-SiC powders with different sizes are vacuum heat-treated at 1900℃,there is a significant disparity between neck growth rate and crystal structure transformation.At high temperature,the nano-β-SiC powder has higher vapor pressure and its neck growth rate is relatively faster.Subsequently,3 C-SiC microparticles with higher sphericity are acquired after evaporation-coagulation and recrystallization;(3)using C/Si/SiC 70/10/10 at%and C/SiC 60/20 at%powder as raw materials with the pretreatment of ball milling and high-temperature vacuum heat treatment,C/Si 80/20 at%target is obtained by hot-pressing.Compared with the target prepared by the C/SiC 60/20 at%binary component system,the target prepared by the ternary component pretreatment powder has better uniformity.Its average resistivity is 3.9 mΩ·cm and the range is 0.59 mΩ·cm,the density is 2.35 g/cm^3,and the degree of graphitization is 0.17 which shows the graphite crystals have good integrity;(4)C/Si 80/20 at%target was magnetron sputtered on silicon wafer,glass and ceramic substrate to deposit diamond-like thin films.The results indicate that the film on the Si substrate has a longitudinal growth mode and the film particles are less than 20 nm.The film on glass has a layered growth mode and is tightly bonded with glass substrate.The microstructure of the film on the ceramic substrate,composed of m

关 键 词：C/Si 靶材 Β-SIC 热处理 热压 

分 类 号：TB43[一般工业技术]