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作 者:Heyi Huang Chen Ge Zhuohui Liu Hai Zhong Erjia Guo Meng He Can Wang Guozhen Yang Kuijuan Jin
机构地区:[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]School of Physical Sciences,University of Chinese Academy of Science,Beijing 100049,China [3]Songshan Lake Materials Laboratory,Dongguan 523808,China
出 处:《Journal of Semiconductors》2021年第1期77-89,共13页半导体学报(英文版)
基 金:the National Key R&D Program of China(No.2017YFA0303604 and 2019YFA0308500);the Youth Innovation Promotion Association of CAS(No.2018008);the National Natural Science Foundation of China(Nos.12074416,11674385,11404380,11721404,and 11874412);the Key Research Program of Frontier Sciences CAS(No.QYZDJSSW-SLH020).
摘 要:Von Neumann computers are currently failing to follow Moore’s law and are limited by the von Neumann bottleneck.To enhance computing performance,neuromorphic computing systems that can simulate the function of the human brain are being developed.Artificial synapses are essential electronic devices for neuromorphic architectures,which have the ability to perform signal processing and storage between neighboring artificial neurons.In recent years,electrolyte-gated transistors(EGTs)have been seen as promising devices in imitating synaptic dynamic plasticity and neuromorphic applications.Among the various electronic devices,EGT-based artificial synapses offer the benefits of good stability,ultra-high linearity and repeated cyclic symmetry,and can be constructed from a variety of materials.They also spatially separate“read”and“write”operations.In this article,we provide a review of the recent progress and major trends in the field of electrolyte-gated transistors for neuromorphic applications.We introduce the operation mechanisms of electric-double-layer and the structure of EGT-based artificial synapses.Then,we review different types of channels and electrolyte materials for EGT-based artificial synapses.Finally,we review the potential applications in biological functions.
关 键 词:electrolyte-gated transistors neuromorphic comupting artificial synapses
分 类 号:TP302[自动化与计算机技术—计算机系统结构]
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