Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors  

作　　者：Chenrong Gong Lin Chen Weihua Liu Guohe Zhang 

机构地区：[1]School of Microelectronics,Xi'an Jiaotong University,Xi'an 710049,China

出　　处：《Journal of Semiconductors》2021年第1期122-127,共6页半导体学报（英文版）

摘　　要：Multi-terminal electric-double-layer transistors have recently attracted extensive interest in terms of mimicking synaptic and neural functions.In this work,an Ion-Gel gated graphene synaptic transistor was proposed to mimic the essential synaptic behaviors by exploiting the bipolar property of graphene and the ionic conductivity of Ion-Gel.The Ion-Gel dielectrics were deposited onto the graphene film by the spin coating process.We consider the top gate and graphene channel as a presynaptic and postsynaptic terminal,respectively.Basic synaptic functions were successfully mimicked,including the excitatory postsynaptic current(EPSC),the effect of spike amplitude and duration on EPSC,and paired-pulse facilitation(PPF).This work may facilitate the application of graphene synaptic transistors in flexible electronics.

关 键 词：Ion-Gel GRAPHENE synaptic transistors short-term plasticity(STP) 

分 类 号：TN32[电子电信—物理电子学]