一种新型降低GIDL的纳米线环栅场效应晶体管  

A Novel Insulated Ring-on-Channel Gate All Around MOSFET to Reduce GIDL

作　　者：唐雅欣 孙亚宾[1] 李小进[1] 石艳玲[1] TANG Yaxin;SUN Yabin;LI Xiaojin;SHI Yanling(Shanghai Key Lab.of Multidimensional Inform.Processing,Depart.of Elec.Engineer.,School of Communication and Electronic Engineering,East China Normal Univ.,Shanghai 200241,P.R.China)

机构地区：[1]华东师范大学通信与电子工程学院电子工程系上海多维信息处理重点实验室,上海200241

出　　处：《微电子学》2020年第6期894-898,共5页Microelectronics

基　　金：国家科技重大专项资助项目(2016ZX02301003);国家自然科学基金资助项目(61574056,61704056);上海扬帆计划资助项目(YF1404700);上海市科学技术委员会资助项目(14DZ2260800)。

摘　　要：提出了一种可以有效降低环栅晶体管栅致漏极泄漏(GIDL)的新型非对称沟道介质环场效应环栅(GAA)晶体管。位于漏端附近的沟道介质环结构可有效降低载流子沿沟道方向的带间隧穿几率,从而显著改善环栅器件在关态时的栅致漏极泄漏电流情况。3D TCAD仿真结果表明,与具有真空侧墙或者一般氧化物侧墙的常规环栅器件相比,新型非对称沟道介质环晶体管静态漏电明显降低,开关比提高;栅围寄生电容、最大振荡频率(fMAX)和截止频率(fT)未受明显影响。沟道介质环厚度的增加会线性减小器件的关态电流和开态电流,但会提高器件的开关比。In order to solve an issue of Gate Induced Drain Leakage(GIDL) effect but improve the analog performance in Gate All Around(GAA) MOSFET, a novel structure of insulated ring-on-channel GAAFET was designed. The characteristics of this structure were that the insulated ring was introduced on channel near drain, which was helpful to suppress longitude band-to-band tunneling for better electrical characteristics. Compared with conventional GAA MOSFETs, the results of 3 D numerical TCAD simulations exhibited that the off-state current was significantly reduced but on-state-to-off-state current ratio(ION/IOFF) was enhanced. Dynamic performance was still great owing to its high maximum oscillation frequency fMAX and the cut off frequency fT. In addition, an increasing of thickness for the insulated ring could decrease both IOFFand IONbut improve the ION/IOFFratio.

关 键 词：沟道介质环 栅致漏极泄漏电流 纵向带间隧穿 环栅晶体管 

分 类 号：TN386[电子电信—物理电子学]