杜瓦激活对探测器芯片温度影响的理论与试验研究  

Theoretical and Experimental Research on the Influence of Dewar Activation on the Temperature of Detector Chip

作　　者：洪晓麦 王立保 沈星 刘道进 张杨文 张丽芳 程海玲 黄立 HONG Xiao-mai;WANG Li-bao;SHEN Xing;LIU Dao-jin;ZHANG Yang-wen;ZHANG Li-fang;CHENG Hai-lin;HUANG Li(Wuhan Guide Infrared Co. , Ltd. , Wuhan 430205, China)

机构地区：[1]武汉高德红外股份有限公司,湖北武汉430205

出　　处：《红外》2021年第1期11-15,共5页Infrared

摘　　要：杜瓦激活过程会引起探测器芯片温度过冲,导致芯片失效。通过仿真计算分析了吸气剂激活过程中产生的温度分布,研究了探测器芯片在杜瓦激活时温度升高过冲的主要传热途径,并提出了一种吸气剂挡板方案。试验结果表明,该方案可将激活过程中探测器芯片表面的最高温度由105℃降至85℃,解决了激活过程中探测器芯片的温度过冲问题。The dewar activation process will cause the temperature of the detector chip to overshoot and cause the chip to fail.The temperature distribution in the process of dewar activation is analyzed by simulation.The main heat transfer path of the detector chip with temperature rise and overshoot during dewar activation is studied.A scheme of getter baffle is proposed,which can reduce the maximum surface temperature of the detector chip from 105℃to 85℃,and solve the problem of temperature overshoot in the activation process.

关 键 词：红外探测器 吸气剂 杜瓦 激活 

分 类 号：TN2[电子电信—物理电子学]