新型低噪声电荷灵敏前置放大器设计  

Design of New Low Noise Charge Sensitive Preamplifier

作　　者：熊思 高超嵩 黄光明 孙向明 XIONG Si;GAO Chao-song;HUANG Guang-ming;SUN Xiang-ming(Key Laboratory of Quark and Lepton Physics(MOE)and College of Physical Science&Technology,Central China Normal University,Wuhan 430079,China)

机构地区：[1]华中师范大学物理科学与技术学院夸克与轻子物理教育部重点实验室,武汉430079

出　　处：《核电子学与探测技术》2020年第2期353-358,共6页Nuclear Electronics & Detection Technology

基　　金：国家自然科学基金青年项目(11805080);国家重点研发计划项目(2016YFE0100900)资助。

摘　　要：为满足Topmetal-S芯片研制需求,设计了一种低噪声电荷灵敏前置放大器。该电荷灵敏前置放大器在0.35pμm商业标准工艺上完成设计,采用单端折叠共源共栅结构,其等效输人电荷噪声约为56.47e,电荷转换增益为223.40mV/fC,上升时间为633.30ns;开环增益为74.94dB,线性度在3.70%以内的输人电荷范围为0~6.50fC。In order to meet the requirements of Topmetal-S chips,a low-noise charge-sensitive preamplifier is designed.The charge-sensitive preamplifier is designed on a 0.35μm commercial standard process.It uses a single-ended folded cascode structure.Its equivalent input charge noise is approximately 56.47e-,the charge conversion gain is 223.40mV/fC,and the rise time is 633.30ns;the open loop gain is 74.94dB,When the input charge range is 0~6.50fC,the linearity is less than 3.70%.

关 键 词：电荷灵敏前置放大器 低噪声 TopmetalS 等效电荷噪声 

分 类 号：TL821[核科学技术—核技术及应用]