键丝结构参数对IGBT热特性的影响规律  

Influence regularity of bond wire structure parameters on thermal characteristics of IGBT module

作　　者：贾英杰[1] 肖飞[1] 罗毅飞[1] 刘宾礼[1] 黄永乐 JIA Ying-jie;XIAO Fei;LUO Yi-fei;LIU Bin-li;HUANG Yong-le(National Key Laboratory of Science and Technology on Vessel Integrated Power System,Naval Univ.of Engineering,Wuhan 430033,China)

机构地区：[1]海军工程大学舰船综合电力技术国防科技重点实验室,武汉430033

出　　处：《海军工程大学学报》2020年第6期18-23,共6页Journal of Naval University of Engineering

基　　金：国家自然科学基金资助项目(51490681);国家973计划资助项目(2015CB251004)。

摘　　要：针对焊接式绝缘栅双极型晶体管(IGBT)模块的键丝失效问题,首先分析了IGBT模块的电热耦合机理,并构建了基于有限元的某型IGBT模块电热耦合模型,通过实验验证了该模型的准确性;然后,从理论和仿真层面定量研究了键丝结构参数对IGBT热特性的影响规律。研究结果表明:当键丝的截面尺寸小于临界值时,键丝与芯片的温度将产生明显分化,键丝温度会急剧升高进而导致熔断;键丝焊盘面积的减小也会导致芯片温度的升高,对焊点处温度变化的影响尤为明显。Aiming at the problem of bond wire failure of welded insulated gate bipdar transistor(IGBT) module, the electro-thermal coupling mechanism of IGBT is analyzed firstly. Furthermore, an electro-thermal coupling model based on finite element method of the studied IGBT module is constructed, which is verified by experiments. Then, the influence regularity of the structure parameters of the bond wire on the thermal characteristics of IGBT is quantitatively studied through theory and simulation. The results show that when the cross-section size of the bond wire is less than the critical value, the temperature of the bond wire and the chip will be distinctly differentiated, and the temperature of the bond wire will rise sharply and lead to fuse;and that the decrease of bond pad area will also leads to the increase of the chip temperature, especially the temperature change at solder joints.

关 键 词：IGBT 电热耦合 有限元法 结构参数 参数化分析 

分 类 号：TN322[电子电信—物理电子学]