等离子体加热单晶体生长室内温度分布的数值模拟  

Numerical Simulation of Temperature Distribution in Single Crystal Growing Room Heated by Plasma

作　　者：毕孝国 宋宜璇 郑道平 BI Xiao-guo;SONG Yi-xuan;ZHENG Dao-ping(New Energy College,Shenyang Institute of Engineering,Shenyang 110136,Liaoning Province;Graduate Department,Shenyang Institute of Engineering,Shenyang 110136,Liaoning Province)

机构地区：[1]沈阳工程学院新能源学院,辽宁沈阳110136 [2]沈阳工程学院研究生部,辽宁沈阳110136

出　　处：《沈阳工程学院学报（自然科学版）》2021年第1期76-79,共4页Journal of Shenyang Institute of Engineering:Natural Science

基　　金：中央引导地方科技发展专项资金(2020JH6/10500069);2020年度沈阳市科学技术计划,重大科技成果转化专项(20-203-5-13)。

摘　　要：建立等离子加热条件下单晶体生长环境的物理模型,划分网格,并对温度和速度的分布数值进行计算与分析,研究初始条件和边界条件的影响规律,进而获得单晶体生长的最佳参数和晶体生长炉的设计数据。结果表明:中心轴向温度在距离喷嘴入口65 mm左右处达到适合钛酸锶晶体生长熔点,确定了晶体在生长炉内的合理位置。The physical model of the environment for the growth of single crystal under the condition of plasma heating was established,the grid was divided,and the temperature and velocity distribution were calculated and analyzed.By studyingthe influence law of the initial conditions and boundary conditions,the optimal parameters for the growth of single crystal and the design data of the crystal growth furnace were obtained.The results of the temperature distribution show that the central axial temperature reaches the suitable melting point for the growth of strontium titanate crystals at about 65 mm from the nozzle inlet,and the reasonable placement position of crystals in the growth furnace is determined.

关 键 词：等离子体 生长室 温度分布 数值模拟 

分 类 号：O782[理学—晶体学]