盖革模式雪崩光电二极管的场效应管淬灭电路设计  

Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes

作　　者：施向东 赖晓艳 SHI Xiangdong;LAI Xiaoyan(Avic China Airborne Missile Academy,Luoyang 471009,China)

机构地区：[1]中国空空导弹研究院,河南洛阳471009

出　　处：《红外技术》2021年第1期56-59,78,共5页Infrared Technology

摘　　要：雪崩光电二极管(Avalanche Photondiode,APD)是一种常用于激光探测领域的光敏元件。本文针对盖革模式雪崩光电二极管(Geiger Mode-Avalanche Photondiode,Gm-APD)工作时发生的雪崩效应,设计了一种场效应管淬灭电路(Field Effect Transistor Quenching Circuit)。首先,针对Gm-APD器件的特性建立了Gm-APD的电学模型。其次,在此模型的基础上,设计并仿真验证了场效应管淬灭电路,实现了对Gm-APD的快速淬灭。结果表明,本文设计的场效应管淬灭电路淬灭速度快、死时间短、性能较优,淬灭时间和死时间分别为21.026 ns和16.5 ns,满足激光测距成像的应用需求。The avalanche photodiode(APD)is a photosensitive component commonly used in devices employed in the field of laser detection.In this study,a field-effect transistor quenching circuit is designed for a Geiger-mode(Gm)-avalanche photodiode for detecting avalanche effects.First,a circuit model of a Gm-APD was established based on the characteristics of a traditional Gm-APD device.Second,based on this model,afield-effect transistor quenching circuit was simulated to confirm the rapid quenching of the Gm-APD.Results indicated that the field-effect transistor quenching circuit in this study exhibited a high quenching speed,a short dead time,and improved performance.The quenching and death times were 21.026 and 16.5 ns,respectively,which meet the application requirements of laser ranging imaging.

关 键 词：盖革模式 APD 场效应管淬灭电路 激光测距成像 

分 类 号：TN958.98[电子电信—信号与信息处理]