W^6+掺杂SrBi4Ti4O(15)-Bi4Ti3O(12)共生铋层状压电陶瓷的结构与电学性能  

Structural and electrical properties of W^6+ doped SrBi4Ti4O15-Bi4Ti3O12 intergrowth layered piezoelectric ceramics

作　　者：黄立伟 江向平 陈超 黄枭坤 聂鑫 HUANG Liwei;JIANG Xiangping;CHEN Chao;HUANG Xiaokun;NIE Xin(Jiangxi Key Laboratory of Advanced Ceramic Materials,Department of Material Science and Engineering,Jingdezhen Ceramic Institude,Jingdezhen 333001,Jiangxi Province,China)

机构地区：[1]景德镇陶瓷大学材料科学与工程学院江西省先进陶瓷材料重点实验室,江西景德镇333001

出　　处：《电子元件与材料》2021年第1期24-29,35,共7页Electronic Components And Materials

基　　金：国家自然科学基金地区基金(51762024);江西省自然科学基金(20192BAB206008)。

摘　　要：采用固相法制备了SrBi8Ti(7-x)WxO(27)(SBT-BIT-xW^6+,x=0.00,0.02,0.04,0.06,0.08,0.10)共生铋层状压电陶瓷材料,系统研究了W^6+掺杂对陶瓷样品的微观结构、介电、压电及铁电性能的影响。研究发现所有样品均为单一的m=3.5的共生铋层状结构,且所有陶瓷均有较高致密性,烧结效果较好。拉曼结果表明引入W^6+后优化晶体结构,降低了晶格畸变程度。施主掺杂能有效地降低氧空位浓度,使陶瓷样品介电损耗大幅降低,同时显著地增强了样品的铁电性能和压电性能;当掺杂量x=0.08时,样品的压电常数d(33)由11 pC/N提高到24.1 pC/N,剩余极化强度2Pr由3.72 μC/cm~2提至5.54 μC/cm^2,居里温度Tc由595℃降至554℃。并且当退火温度为500℃时,其d(33)仍保持23.2 pC/N,约为初始值的96.3%。表明该材料在高温领域具有潜在应用价值。W6+-doped SrBi8Ti7-xWxO27(SBT-BIT-xW^6+,x=0.00,0.02,0.04,0.06,0.08,0.10)inter-growth bismuth layered ceramics were prepared by a conventional solid-state method.The effect of W6+doping on crystal structure,microstructure,dielectric,piezoelectric and ferroelectric properties of ceramics were systematically studied.The results show that all the ceramics possess a single inter-growth bismuth layer-structured with m=3.5,and all ceramics have compact structures and are in good sinter condition.The Raman results show that the crystal structure is optimized,and the lattice distortion is reduced by W6+doping.Donor doping can effectively reduce the oxygen vacancy concentration,greatly reduce the dielectric loss of ceramic samples,and significantly enhance the ferroelectric and piezoelectric properties of the samples.Optimized properties is obtained with composition of x=0.08(d33=24.1 pC/N,2Pr=5.54μC/cm^2,Tc=554℃),which exhibits excellent thermal stability and can retain 96.3%of their initial d33 values after annealing at 500℃for 2 h.All above results implying that this ceramic has potential application at high temperature.

关 键 词：共生结构 施主掺杂 微观结构 电学性能 氧空位 SrBi4Ti4O(15)-Bi4Ti3O(12) 

分 类 号：TB34[一般工业技术—材料科学与工程]