二维原子层谷电子学材料和器件  

Valleytronic properties and devices based on two-dimensional atomic layer materials

作　　者：孙真昊 管鸿明 付雷 沈波[1] 唐宁[1] Sun Zhen-Hao;Guan Hong-Ming;Fu Lei;Shen Bo;Tang Ning(State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Peking University,Beijing 100871,China)

机构地区：[1]北京大学物理学院,人工微结构与介观物理国家重点实验室,北京100871

出　　处：《物理学报》2021年第2期149-161,共13页Acta Physica Sinica

基　　金：国家重点研发计划(2016YFB0400802,2018YFB0406603,2018YFE0125700);国家自然科学基金(批准号:61574006,61927806,61521004,11634002)资助的课题.

摘　　要：人为操控电子的内禀自由度是现代电子器件的核心和关键.如今电子的电荷和自旋自由度已经被广泛地应用于逻辑计算与信息存储.以二维过渡金属硫属化合物为代表的二维原子层材料由于其具有独特的谷自由度和优异的物理性质,成为了新型谷电子学器件研究的优选材料体系.本文介绍了能谷的基本概念、谷材料的基本物理性质、谷效应的调控和谷电子学器件的研究进展,并对谷电子学材料和器件的研究进行了总结与展望.Artificial manipulation of electronic degrees of freedom is the key point to realize modern electronic devices.Both charge and spin of electron have been widely studied and applied to logic circuits and information storage devices.Valley,the unique degree of freedom of crystal electrons,has also attracted great attention of the researchers in the past decade.The valleytronics progress benefits from the tremendous improvements of the two-dimensional atomic layer material growth technologies and in-depth explorations of valley properties.Valleytronic materials,represented by two-dimensional transition metal dichalcogenides,have become an excellent platform for the research and design of new electronic devices due to their special optical responses and distinctive electronic transport properties.The valley devices have the advantages of fast operation,low energy consumption,less information loss,high integration and long transmission distance.In this review,we first introduce the basic concepts and properties of the energy valley,such as the valley Hall effect and the valley circular dichroism.Second,we describe the crystal structures and energy band diagrams of the two-dimensional transition metal dichalcogenides.Third,the progress in artificial manipulation of the valley effects is summarized.Some approaches which can break the inversion symmetry and therefore induce the valley degree of freedom are introduced.Fourth,we discuss the methods of realizing valley polarization.Fifth,the developments of valleytronic devices in recent years are reviewed.Finally,a summary and an outlook are given.

关 键 词：二维过渡金属硫属化合物 谷电子学 

分 类 号：TB34[一般工业技术—材料科学与工程] TN03[电子电信—物理电子学]