BCB介质层同轴TSV的热力学仿真分析  

Thermodynamics Simulation and Analysis of Coaxial TSV with BCB Dielectric Layer

作　　者：丁英涛[1] 吴兆虎 杨宝焱 杨恒张 DING Yingtao;WU Zhaohu;YANG Baoyan;YANG Hengzhang(School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China)

机构地区：[1]北京理工大学信息与电子学院,北京100081

出　　处：《北京理工大学学报》2021年第1期65-69,共5页Transactions of Beijing Institute of Technology

基　　金：国家自然基金资助项目(62074015,61774015)。

摘　　要：穿透硅通孔(through silicon via,TSV)的热机械可靠性问题已经成为制约TSV市场化应用的重要因素.本文对BCB介质层同轴TSV的热力学特性进行了研究分析,同时对其几何参数(SiO2绝缘层厚度、屏蔽环厚度、TSV间距、中心信号线半径)进行了变参分析,为降低热应力提供指导意见.结果表明,在阻抗匹配的前提下,通过增加SiO2绝缘层厚度、减小屏蔽环厚度能够有效降低同轴TSV的诱导热应力;相比之下中心信号线半径和TSV间距的变化对其影响可忽略不计.Thermo-mechanical reliability of through silicon via(TSV)has become an important factor restricting the market application of TSV.In this paper,the thermodynamics characteristics of coaxial TSV with BCB dielectric layer were studied and analyzed.Meanwhile,in order to reduce the thermal stress of coaxial TSV,different parameters were simulated with various design geometries,including the thickness of SiO2 insulation layer and shielding ring,the pitch of TSVs as well as the radius of center signal line.The results show that,under the premise of the characteristic impedance match,the thermal stress of coaxial TSV can be effectively reduced by increasing the thickness of SiO2 insulation layer or decreasing the thickness of shielding ring,while the influence of the radius of the center signal line and the TSV pitch can be neglected.

关 键 词：同轴TSV BCB介质层 热应力 有限元分析 

分 类 号：TN402[电子电信—微电子学与固体电子学]