Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring  

作　　者：Rizwan Ur Rehman Sagar Min Zhang Xiaohao Wang Babar Shabbir Florian JStadler 

机构地区：[1]Nanshan District Key Lab for Biopolymers and Safety Evaluation,Shenzhen Key Laboratory of Polymer Science and Technology,Guangdong Research Center for Interfacial Engineering of Functional Materials,College of Materials Science and Engineering,Shenzhen University,Shenzhen,518055,China [2]Tsinghua Shenzhen International Graduate School,Tsinghua University,Shenzhen,518055,China [3]Department of Materials Science and Engineering,ARC Centre of Excellence in Future Low-Energy Electronics Technologies(FLEET),Monash University,Clayton,Victoria,3800,Australia

出　　处：《Nano Materials Science》2020年第4期346-352,共7页纳米材料科学（英文版）

基　　金：The authors would like to thank the National High Technology Research and Development Plan of China(2015AA043505);the National Science Foundation of China(21574086);Shenzhen Sci&Tech(research grant ZDSYS201507141105130);the Shenzhen City Science,Technology Plan Project(JCYJ20160520171103239);Equipment Advanced Research Funds(61402100401);Equipment Advanced Research Key Laboratory Funds(6142804180106);Shenzhen Fundamental Research Funds(JCYJ20180508151910775);the National Natural Science Foundation of China(11850410427)for financial support.

摘　　要：Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large,linear and unsaturated room temperature magnetoresistance.However,the magnetoresistance of graphene foam is not as large as that of monolayer graphene.Herein,we describe how magnetoresistance^100%was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene;the highest magnetoresistance of^158%was detected at 5 K under a magnetic field of 5 T.Unlike monolayer graphene,graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.

关 键 词：Graphene foam MAGNETORESISTANCE POROSITY Defects Surface area 

分 类 号：TP212.13[自动化与计算机技术—检测技术与自动化装置] TQ127.11[自动化与计算机技术—控制科学与工程]