高压大功率器件用6 kV/180℃高温反偏测试装置研制  

6 kV/180℃ High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices

作　　者：邓二平 孟鹤立 王延浩 赵志斌 黄永章 DENG Erping;MENG Heli;WANG Yanhao;ZHAO Zhibin;HUANG Yongzhang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Beijing 102206,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京102206

出　　处：《中国电力》2021年第2期133-139,共7页Electric Power

基　　金：中央高校基本科研专项资金(高压大功率IGBT器件老化耦合机理研究,2019MS001)。

摘　　要：高温反偏测试(high temperature reverse bias,HTRB)作为功率器件可靠性测试的重要环节,其测试装置的精度和功能决定了对被测器件老化程度判定的准确性。针对高压大功率器件对测试装置空间、精度以及可靠性的需求,自主研制出了电压等级6 kV、环境温度180℃的高温反偏测试装置。此外,该测试装置还集成了温度-漏电流关系曲线自动测量及失效期数据高频采集等功能,更为准确灵活地监测被测器件的状态,进行可靠性评估与失效分析。为验证该测试装置的各项功能及可靠性,使用该装置对商业IGBT器件进行了测试,初步测试结果表明:温度与漏电流呈指数关系,集射极漏电流随着老化的进行逐渐增大。该装置符合高压大功率半导体器件对高温反偏测试的需求且适用于不同封装的IGBT器件。High Temperature Reverse Bias(HTRB) test is an important part in reliability tests on IGBTs. The accuracy and function of the test equipment determine the accuracy of the performance monitoring of the tested device. To Meet the requirements of space,accuracy and reliability for test equipment, HTRB test equipment with voltage level of 6 kV and ambient temperature of 180℃ was independently built for high voltage and high power devices. Further, the test equipment integrates some functions such as automatic measurement of temperature-drain current relationship curve and high-frequency acquisition of failure data, which can better monitor the state of the tested device for reliability evaluation and failure analysis. For the purpose of testing the function and reliability of the test device and getting the relationship curve of leakage current–temperature and aging time–leakage current, some commercial IGBT devices were tested with the equipment. Leakage current–temperature curve is an exponential function and aging time–leakage current curve is increasing slowly. This equipment realizes the test requirement of high voltage and high power devices, suiting for different packages of IGBTs.

关 键 词：高压大功率IGBT器件 高温反偏测试 加速老化试验 终端 漏电流 

分 类 号：TN322.8[电子电信—物理电子学]