Exploitation of Bi2O2Se/graphene van der Waals heterojunction for creating efficient photodetectors and short-channel field-effect transistors  

作　　者：Congwei Tan Shipu Xu Zhenjun Tan Luzhao Sun Jinxiong Wu Tianran Li Hailin Peng 

机构地区：[1]Center for Nanochemistry,Beijing Science and Engineering Center for Nanocarbons,Beijing National Laboratory for Molecular Sciences,Institute of Physical Chemistry,College of Chemistry and Molecular Engineering,Peking University,Beijing,China [2]Academy for Advanced Interdisciplinary Studies,Peking University,Beijing,P.R.China

出　　处：《InfoMat》2019年第3期390-395,共6页信息材料（英文）

基　　金：support from the National Basic Research Program of China(No.2016YFA0200101);the National Natural Science Foundation of China(Nos.21733001 and 21525310);Boya Postdoctoral Fellowship.

摘　　要：The formation of heterojunction within solid-state devices enables them with eventually high performances,but provides a challenge for material synthesis and device fabrication because strict conditions such as lattice match are needed.Herein,we show a facile method to fabricate a van der Waals(vdW)heterojunction between two-dimensional(2D)bismuth oxyselenide(Bi2O2Se)and graphene,during which the graphene is directly transferred to the Bi2O2Se and served as a lowcontract-resistant electrode with small work function mismatch(~50 meV).As an optoelectronic device,the Bi2O2Se/graphene vdW heterojunction allows for the efficient sensing toward 1200-nm incident laser.Regarding the application of fieldeffect transistors(FETs),the short-channel(50 nm)sample can be synthesized by utilizing these two 2D materials(ie,channel:Bi2O2Se;drain/source terminal:graphene)and the n-type characteristic can be observed with the accordant field modulation.It is confirmed that we show a simple way to prepare the vdW heterojunction which is aiming to the high-performance applications among optoelectronics and FETs.

关 键 词：Bi2O2Se GRAPHENE van der Waals heterojunctions 

分 类 号：TN3[电子电信—物理电子学]