纳米二氧化钛薄膜的低温制备及其光电性能研究  

Study on low temperature preparation and photoelectric properties of nanometer titanium dioxide films

作　　者：魏超[1] 彭忠进 WEI Chao;PENG Zhongjin(College of Xuhai,China University of Mining and Technology,Xuzhou 221008,China)

机构地区：[1]中国矿业大学徐海学院,江苏徐州221008

出　　处：《能源化工》2020年第6期25-29,共5页Energy Chemical Industry

基　　金：江苏省高校自然科学研究项目(No.18KJD430009,低温一步沉淀法合成纳米TiO2及可见光催化性能研究);江苏省高校“青蓝工程”资助。

摘　　要：基于低温一步法制备了纳米二氧化钛,在导电玻璃上制备出二氧化钛薄膜,并对其进行了XRD、SEM、AFM的表征分析。光电性能测试结果表明:在钛酸四丁酯与乙二醇体积比为1∶10、H2O与H2SO4体积比为1∶1条件下制备的二氧化钛薄膜厚度约为300 nm,表面粗糙度为13.6 nm,其光电流最大;煅烧后二氧化钛薄膜的结合力提高,致密性增加,其光电流进一步提高,硫酸铵的加入并未提高其薄膜的光电流,但其I-V曲线的电流明显增加。On the basis of one-step preparation of nanometer titanium dioxide at low temperature, TiO2 thin films are prepared on FTO glass, and their properties are characterized through XRD, SEM and AFM. The photoelectric performance test results show that when the volume ratio of tetrabutyl titanate to ethylene glycol is 1 ∶ 10 and the volume ratio of H2O to H2SO4 is 1 ∶ 1, the thickness of titanium dioxide film is about 300 nm, the surface roughness is 13.6 nm, and the photocurrent is the largest. After calcination, the binding force, density and photocurrent of TiO2 film are improved. The addition of ammonium sulfate did not increase the photocurrent of the films, but the current of I-V curve is significantly increased.

关 键 词：纳米二氧化钛薄膜 一步法 光电性能 制备 

分 类 号：TQ134.11[化学工程—无机化工]