CuSCN作为石墨烯/硅异质结太阳能电池无机界面层的数值模拟  

Numerical Simulation of Graphene/Silicon Solar Cells Using CuSCN as an Inorganic Interface Layer

作　　者：张铃 杨钦如 余梦 黄锐明 程其进 ZHANG Ling;YANG Qinru;YU Meng;HUANG Ruiming;CHENG Qijin(College of Energy,Xiamen University,Xiamen 361102,China;Shenzhen Research Institute of Xiamen University,Shenzhen 518000,China;School of Electronic Science and Engineering,Xiamen University,Xiamen 361005,China)

机构地区：[1]厦门大学能源学院,厦门361102 [2]厦门大学深圳研究院,深圳518000 [3]厦门大学电子科学与技术学院,厦门361005

出　　处：《材料导报》2021年第4期4001-4006,共6页Materials Reports

基　　金：深圳市基础研究面上项目(JCYJ20190809160401653);广东省基础与应用基础研究基金(2020A1515011187)。

摘　　要：界面工程是改善石墨烯/硅异质结太阳能电池性能的有效方法之一,但目前常用的界面材料存在价格高、稳定性差等问题。本实验采用AFORS⁃HET软件对石墨烯/硅太阳能电池进行数值模拟,并引入无机界面材料CuSCN实现降低电池成本、优化器件性能和稳定性的目的,研究了CuSCN界面层的作用、CuSCN层的空穴迁移率和CuSCN/n⁃Si的价带补偿对太阳能电池性能的影响。结果表明,引入CuSCN界面层和增加CuSCN层的空穴迁移率均有利于提高器件的光伏性能。当CuSCN/n⁃Si界面的价带补偿大于-0.1 eV时,CuSCN层可作为电子阻挡⁃空穴传输层;并且当CuSCN/n⁃Si界面的价带补偿为0.2 eV时,所构建的石墨烯/CuSCN/硅异质结太阳能电池模型取得了25.8%的最佳光电转换效率。本研究有助于揭示影响石墨烯/CuSCN/硅异质结太阳能电池性能的各种因素,为制备低成本、高效率的石墨烯/硅太阳能电池提供了有效途径。Interface engineering is one of the effective methods to improve the performance of graphene/silicon heterojunction solar cells,but until now the interface layer materials suffer from the problems of high price and poor stability.In this paper,the performance of graphene/silicon solar cells was studied via AFORS⁃HET software.An inorganic interface layer of CuSCN was adopted to reduce the cost and improving the performance and stability of the solar cells.The role of the CuSCN interface layer as well as the effects of the hole mobility of the CuSCN layer and the valence band offset of the CuSCN/n⁃Si on the performance of solar cells were investigated.The results show that the introduction of the CuSCN interface layer and the increase of the hole mobility of the CuSCN layer are beneficial to improving the photovoltaic performance of the devices.When the valence band offset of the CuSCN/n⁃Si interface is greater than-0.1 eV,the CuSCN layer can act as the electron⁃blocking and hole⁃transporting layer.Particularly,when the valence band offset of the CuSCN/n⁃Si interface is equal to 0.2 eV,the graphene/CuSCN/silicon heterojunction solar cell model can achieve the best photovoltaic conversion efficiency of 25.8%.This study helps to reveal the effect of various factors on the performance of the graphene/CuSCN/Si solar cells,and provides a solution for the preparation of low⁃cost and high⁃efficiency graphene/silicon solar cells.

关 键 词：石墨烯 肖特基结 界面工程 硫氰酸亚铜 数值模拟 能带补偿 

分 类 号：TM914.4[电气工程—电力电子与电力传动]