三电平移相全桥变换器整流二极管RC吸收参数多目标优化设计  

Multi-objective Optimization Design of RC Snubber of Rectifier Diodes for Three-level Phase-shifted Full-bridge Converter

作　　者：王海超 范学鑫[1] 杨国润[1] 王瑞田[1] 张新生[1] 罗毅飞[1] WANG Haichao;FAN Xuexin;YANG Guorun;WANG Ruitian;ZHANG Xinsheng;LUO Yifei(National Key Laboratory of Science and Technology on Vessel Integrated Power System,Naval University of Engineering,Wuhan 430033,China)

机构地区：[1]海军工程大学舰船综合电力技术国防科技重点实验室,武汉430033

出　　处：《高电压技术》2021年第1期159-168,共10页High Voltage Engineering

基　　金：国家自然科学基金(51907199,51707200,51490681);国家重点基础研发计划(973计划)(2015CB251004)。

摘　　要：传统的整流二极管RC吸收参数设计基于谐振等效电路,不能精确刻画二极管反向恢复过程,RC参数难以优化。为此,基于大功率PIN二极管集总电荷模型,采用多目标优化设计RC吸收电路参数。首先,根据三电平移相全桥变换器拓扑结构及调制方式,分析了RC参数对整流二极管反向电压尖峰的影响规律。其次,基于大功率PIN二极管的集总电荷模型对理论分析进行了仿真验证。然后,采用多目标优化设计RC吸收电路。最后,实验结果验证了最优RC参数抑制整流二极管反向电压尖峰的有效性。The traditional design of RC parameter is based on the resonant equivalent circuit, which can not accurately describe the diode reverse recovery process, and it is difficult to optimize the RC parameters. Based on a lumped charge model for high-power PIN diode, the parameters of RC snubber are optimized with multi-objective optimization. Firstly, according to the topology and modulation mode of a three-level phase-shifted full-bridge converter, the influences of RC parameters on the reverse voltage spike of rectifier diode are analyzed. Secondly, based on the lumped charge model for high-power PIN diode, the simulation verification is performed by theoretical analyses. Then, multi-objective optimization design is used to design RC snubber. Finally, the experimental results verify the effectiveness of the optimal RC parameters to suppress the reverse voltage spike of rectifier diode.

关 键 词：三电平移相全桥变换器 二极管反向恢复 集总电荷物理模型 整流二极管电压尖峰 RC吸收电路 

分 类 号：TM46[电气工程—电器] TN313.5[电子电信—物理电子学]