导电聚苯胺线膜修饰ZnO纳米棒阵列的可控制备及其紫外探测性能  

Controllable Preparation and UV Detection Performance of ZnO Nanorod Arrays Modified by Conducting Polyaniline Film

作　　者：王建超 杨光慧 唐格格 麻明友 彭华勇 WANG Jianchao;YANG Guanghui;TANG Gege;MA Mingyou;PENG Huayong(School of Pharmaceutical Sciences,Jishou University,Jishou 416000,China;The Collaborative Innovation Center of Manganese-Zinc-Vanadium Industrial Technology,Jishou 416000,China;Hunan Engineering Laboratory for Analyse and Drugs Development of Ethnomedicine in Wuling Mountains,Jishou University,Jishou 416000,China;Laboratory and Equipment Administration Center,Jishou University,Jishou 416000,China)

机构地区：[1]吉首大学药学院,吉首416000 [2]锰锌钒产业技术湖南省2011协同创新中心,吉首416000 [3]吉首大学,武陵山地区民族药解析与创制湖南省工程实验室,吉首416000 [4]吉首大学,实验室与设备管理中心,吉首416000

出　　处：《人工晶体学报》2021年第1期88-93,共6页Journal of Synthetic Crystals

基　　金：湖南省教育厅科学研究项目(20C1543);吉首大学校级科研项目(Jd19004,Jdx19012);2018年湖南省锰锌钒产业技术协同创新中心本科生科研创新项目。

摘　　要：基于p-n结的光生伏特效应可构筑性能优异的UV探测器,本文采用水热法可控制备竖直排列的氧化锌纳米棒阵列(n型ZnO-NRs),利用原位聚合法在ZnO-NRs表面上修饰p型聚苯胺线膜(PANI-NWs),再组装成ZnO-NRs与ZnO-NRs/PANI-NWs紫外探测器。通过扫描电镜(SEM)、X射线衍射仪(XRD)、紫外可见漫反射(UV-Vis)光谱表征样品的形貌、结构与光学性质。并通过电化学工作站测定电流-时间(I-t)和电流电压(I-V)曲线,表征其光响应性能。结果表明,制备的ZnO-NRs/PANI-NWs材料阵列排列整齐,界面接触良好,孔隙均匀。ZnO-NRs/PANI-NWs探测器在检测365 nm紫外光时,光电流为2.73×10^-4 A;检测254 nm紫外光时,光电流为1.44×10^-4 A。其光电流为ZnO-NRs探测器的4~10倍,ZnO-NRs和PANI-NWs之间形成的p-n结增强了光电导。用ZnO-NRs/PANI-NWs材料组装成的UV探测器体现出稳定性好,响应速度快,恢复时间短,电流增益高等优点,为开发高性能紫外光电探测器提供数据支撑。Based on the photovoltage effect of p-n junction,UV detectors with excellent performance can be constructed.In this paper,vertically aligned ZnO nanorod arrays(n-type)ZnO-NRs were controllable prepared by hydrothermal method.The p-type polyaniline(PANI-NWs)was modified on the surface of ZnO-NRs by in-situ polymerization,and then assembled into ZnO-NRs and ZnO-NRs/PANI-NWs UV detectors.The morphology,structure and optical properties of the samples were characterized by scanning electron microscopy(SEM),X-ray diffraction(XRD)and UV-Vis diffuse reflection spectroscopy.The current time(I-t)and current voltage(I-V)curves were measured by electrochemical workstation to characterize the light response properties.The results show that the ZnO-NRs/PANI-NW smaterials are arranged orderly,the interface contact is good,and the pores are uniform.When the ZnO-NRs/PANI-NWs detector detects 365 nm ultraviolet light,the photocurrent can reach 2.73×10^-4 A;at 254 nm,the photocurrent can reach 1.44×10^-4 A,and its peak value is 4 tO10 times that of ZnO-NRs detector.The increase of photoconductivity is closely related to the p-n junction formed between ZnO-NRs and PANI-NWs.The UV detector assembled with ZnO-NRs/PANI-NWs material shows good stability,fast corresponding speed,short recovery time and high current gain,which provides data support for the development of high performance.

关 键 词：导电聚苯胺 ZNO纳米棒阵列 水热法 P-N结 光生伏特效应 紫外探测性能 

分 类 号：TN36[电子电信—物理电子学]