碲镉汞材料中Hg空位、Au、As掺杂的研究进展  

Research Development of Hg Vacancy,Au and As Doping in HgCdTe Materials

作　　者：郝斐 曹鹏飞 杨海燕[1] 吴卿[1] HAO Fei;CAO Peng-fei;YANG Hai-yan;WU Qing(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2021年第2期15-20,28,共7页Infrared

基　　金：陕西省教育厅重点实验室科研计划项目(17JS105)、西安石油大学研究生创新与实践能力培养计划项目(YCS19212066)。

摘　　要：碲镉汞材料是制造红外探测器的基础,高性能红外探测器对碲镉汞材料的要求越来越高。为了提升器件性能,必须提高碲镉汞材料的电学性能。而掺杂是一个很好的选择。碲镉汞材料掺杂可以分为n型和p型两种。对于n型掺杂来说,In是一种理想的掺杂剂,其掺杂研究目前已比较成熟。相对而言,p型掺杂研究还不是那么深入。Hg空位、Au、As掺杂均为碲镉汞材料中常见的p型掺杂手段。通过分析和总结近些年的部分相关文献,介绍了碲镉汞材料中Hg空位、Au、As掺杂的研究进展。Mercury cadmium telluride materials are the basis for the manufacture of infrared detectors.High-performance detectors have increasingly higher requirements for mercury cadmium telluride materials.In order to improve the performance of the device,the electrical performance of the mercury cadmium telluride materials must be improved.Doping is a good choice.The doping of mercury cadmium telluride materials is divided into n-type and p-type doping.For n-type doping,In is an ideal dopant,and the current research on In doping is relatively mature.In comparison,the research on p-type doping is not so in-depth.Hg vacancy,Au and As doping are common p-type doping methods in mercury cadmium telluride materials.By analyzing and summarizing some relevant documents in recent years,the research progress of Hg vacancy,Au and As doping in HgCdTe materials is introduced.

关 键 词：碲镉汞 Hg空位掺杂 Au掺杂 As掺杂 

分 类 号：TN305[电子电信—物理电子学]