高压大电流(4500V/600A)IGBT芯片研制  

Development of Large Size IGBT Chip with High Power Capacity of 4500V/600A

作　　者：刘国友 黄建伟 覃荣震 朱春林 Liu Guoyou;Huang Jianwei;Qin Rongzhen;Zhu Chunlin(State key Laboratory of Advanced Power Semiconductor Devices,Zhuzhou 412001,China;Zhuzhou CRRC Times Electric Co.Ltd,Zhuzhou 412001,China;Zhuzhou CRRC Times Semiconductor Co.Ltd,Zhuzhou 412001,China)

机构地区：[1]新型功率半导体器件国家重点实验室,株洲412001 [2]株洲中车时代电气股份有限公司,株洲412001 [3]株洲中车时代半导体有限公司,株洲412001

出　　处：《电工技术学报》2021年第4期810-819,共10页Transactions of China Electrotechnical Society

摘　　要：提高绝缘栅双极晶体管(IGBT)单芯片电流容量,对减小封装器件芯片并联数、简化封装结构、改善芯片均流至关重要。该文基于高压、大电流、高可靠性IGBT应用需求,通过高压IGBT芯片坚强元胞设计及其协同控制技术实现了元胞之间的开关同步,通过光刻拼版技术解决大尺寸芯片的工艺制造,通过单芯片压接封装验证了大尺寸芯片设计及其性能,探索出一条大尺寸IGBT芯片设计、制造与验证的技术路径。研究开发了全球第一片42mm×42mm大尺寸高压IGBT芯片,攻克了高压IGBT芯片内部大规模元胞集成及其均流控制的技术难题,首次实现了4500V/600A单芯片功率容量,具备优良的动静态特性和更宽的安全工作区,并可以显著提高IGBT封装功率密度与可靠性。Increasing IGBT single-chip current capacity is essential for reducing the parallel number of packaged chips,simplifying the package architecture and improving the chip current sharing capability.According to the application requirements of high voltage,high current and high reliability for IGBT chips,this paper realized cell switching synchronization through robust cell design and its coordinated control,and solved the process manufacturing of large size chips through special photolithography technology.The single-chip press packaging was used to verify the design and performance of large size chips.A technical path for the design,manufacturing and verification of large size IGBT chips was explored.The world’s first 42mm×42mm large-size high-voltage IGBT chip with the power capacity of 4500V/600A was developed.It has excellent dynamic and static characteristics,a wider safe operation area(SOA),and can significantly improve the packaging power density and reliability.

关 键 词：大尺寸IGBT芯片 电流容量 均流 压接 

分 类 号：TN433[电子电信—微电子学与固体电子学]