硅光电二极管结构特性研究  

Study on Structural Characteristics of Silicon Photodiode

作　　者：宋玲玲 SONG Lingling(The 47th Institute of China Electronics Technology Group Corporation,Shenyang 110000,China)

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110000

出　　处：《微处理机》2021年第1期34-36,共3页Microprocessors

摘　　要：为探讨光电二极管工作机理及其改进潜力,从一款常规光电二极管应用产品的设计入手,采用光敏区尺寸逐渐变大、呈规律性排列的硅光电二级管串联的结构,分析其特性与机理。在此基础上对同类产品进行优化,详细阐述新结构工艺原理与实现方式,分别从器件结构、工作原理、不同结构的优劣点等方面对比改进前后两种不同结构光电二极管的特性。从工艺参数选取角度详细分析改进后的光电二极管对衬底类型、衬底电阻率的选择,以及对增透抗反膜结构及厚度的确定;对器件的ID暗电流参数控制等优化也进行了讨论。In order to discuss the working mechanism and improvement potential of photodiodes,starting with the design of a conventional photodiode application product,the series structure of silicon photodiodes with gradually larger photosensitive area and regularly arranged is adopted,and its characteristics and mechanism are analyzed.On this basis,the similar products are optimized,and the process principle and implementation of the new structure are elaborated in detail.The characteristics of two different structures of photodiodes before and after improvement are compared from the aspects of device structure,working principle and advantages and disadvantages of different structures.The selection of substrate type and substrate resistivity,and the determination of anti-reflection film structure and thickness of the improved photodiode are analyzed in detail from the angle of process parameter selection.The optimization of the device's ID dark current parameter control is also discussed.

关 键 词：光电二极管 器件结构 工艺参数 

分 类 号：TN364.2[电子电信—物理电子学]