多晶硅片单面制绒工艺的研究  

STUDY ON SINGLE TEXTURE OF POLYSILICON WAFER

作　　者：张建军 许志卫 张志敏 张永 孙晓凯 谢伟伟 徐苏凡 Zhang Jianjun;Xu Zhiwei;Zhang Zhimin;Zhang Yong;Sun Xiaokai;Xie Weiwei;Xu Sufan(JA Solar Co.,Ltd.,Xingtai 055550,China;RENA Energy and Technology Co.,Shanghai 200030,China)

机构地区：[1]晶澳太阳能有限公司,邢台055550 [2]睿纳能源科技有限公司,上海200030

出　　处：《太阳能》2021年第1期68-72,共5页Solar Energy

摘　　要：介绍了一种新的多晶硅片单面制绒工艺,通过对太阳能多晶硅链式制绒设备进行改造,使制绒槽内的硅片由浸没式腐蚀制绒改为漂浮式腐蚀制绒,同时利用喷淋方式去除硅片背面的损伤层,可有效避免硅片背面的过度腐蚀。通过选定相同条件下的多晶硅原料片,并进行严格均分,分别采用单面制绒工艺与产线常规双面制绒工艺进行制绒,其他工序采用相同设备及工艺配方,测试制绒后硅片的减重、反射率及SEM微观结构,对比分析不同制绒工艺对硅片的影响。结果表明,多晶硅片采用单面制绒工艺后硅片减薄、反射率降低,且采用该工艺制备的太阳电池的转换效率提升了0.03%。This article introduces a new polysilicon wafer single side texturing process.Through the transformation of the texturing tank,the polysilicon wafer is changed from the immersion type to freefloating method,and the spray method is used to corrode the damage layer on the rear of the silicon wafer,which effectively avoids excessive corrosion on the rear of the polysilicon wafer.Polysilicon wafers under the same conditions are selected and strictly evenly distributed.The single side texturing process of polysilicon wafer proposed in this paper and the conventional bifacial texturing process are adopted respectively.The same equipment and process formula are used in other processes.The weight loss,reflectivity and SEM microstructure of polysilicon wafers after texturing are tested.The effects of different texturing process on silicon wafers are compared and analyzed.At the same time,the electrical performance is improved by 0.03%due to the thinning of silicon wafer and the reduction of reflectivity.

关 键 词：太阳电池 多晶硅片 金刚线 漂浮式制绒 转换效率 

分 类 号：TK514[动力工程及工程热物理—热能工程]