一种具有工艺补偿的低功耗CMOS参考电流源  

A low power CMOS current reference with process-insensitive temperature compensation

作　　者：李阳军 杨艳军 陈鸣 张成彬[2] LI Yang-jun;YANG Yan-jun;CHEN Ming;ZHANG Cheng-bin(School of Physics and Electronic Science,Zunyi Normal College,Zunyi 563006,Guizhou,China;Institute of Microelectronics of Chinese Academy of Science,Beijing 100029,China)

机构地区：[1]遵义师范学院物理与电子科学学院,贵州遵义563006 [2]中国科学院微电子研究所,北京100029

出　　处：《微电子学与计算机》2021年第2期62-65,共4页Microelectronics & Computer

基　　金：国家重点研发计划(2018YFB2002604);贵州省教育厅青年科技人才成长项目(黔教合KY字[2018]317号);遵义市科技局、遵义师范学院联合科技研发资金项目(遵师科合LH字[2018]01号)。

摘　　要：为了减小工艺对电流源温度系数的影响,本文提出了一种CTAT电压产生电路,能够产生温度系数对工艺不敏感的CTAT电压;结合温度系数对工艺不敏感的片上电阻,设计了一种具有工艺补偿的参考电流源.参考电流源电路基于0.18μm CMOS工艺设计,电源电压为1.8 V,版图面积为100μm*130μm.后仿真结果表明,tt工艺角下输出参考电流为32.5 nA,整个参考电流源电路消耗电流162 nA;在-40-125°C温度范围内,tt、ff和ss工艺角下的温度系数分别为39 ppm/℃、45 ppm/℃和35 ppm/℃.In order to reduce the influence of process on temperature coefficient of current reference,a CTAT voltage generation circuit is proposed in this paper,which can generate CTAT voltage with temperature coefficient insensitive to process.Combined with on-chip resistor which has process-independent temperature coefficient,a current reference with process compensation is designed.The proposed current reference is designed based on 0.18μm CMOS technology with the power supply of 1.8 V,and the layout area is 100μm*130μm.Post-simulation results show that the current reference consumes 162nA and the output current is 32.5 nA at tt corner.Within the temperature range of-40~125℃,the temperature coefficients at tt,ff and ss corner are 39 ppm/℃,45 ppm/℃and 35 ppm/℃,respectively.

关 键 词：CMOS 参考电流源 低功耗 工艺补偿 

分 类 号：TN432[电子电信—微电子学与固体电子学]