8~14 GHz SiGe BiCMOS宽带功率放大器  

An 8~14 GHz wideband power amplifier in SiGe BiCMOS

作　　者：罗将 何环环 王锋 周中杰 童伟[1] 李健康[1] 苏国东[2] UO Jiang;HE Huan-huan;WANG Feng;ZHOU Zhong-jie;TONG Wei;LI Jian-kang;SU Guo-dong(Nanjing Electronic Devices Institute,Nanjing 210016,Jiangsu,China;Key Laboratory of RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,Hangzhou 310018,Zhejiang,China)

机构地区：[1]南京电子器件研究所,江苏南京210016 [2]杭州电子科技大学射频电路与系统教育部重点实验室,浙江杭州310018

出　　处：《微电子学与计算机》2021年第2期72-76,共5页Microelectronics & Computer

基　　金：毫米波国家重点实验室基金(K202019)。

摘　　要：基于0.18μm SiGe BiCMOS工艺,实现了一个8~14 GHz的宽带功率放大器芯片.通过采用增益分布技术有效地拓展了放大器的工作带宽而又不会显著恶化增益;利用基于变压器的功率合成技术,显著地提高了放大器的输出功率.测试结果表明,放大器获得了27 dB的峰值增益,6 GHz的3dB带宽,其中带宽比为54.5%.在3dB范围内,放大器获得了17.5~20.5 dBm的饱和输出功率,以及12~18%的附加效率.包含压焊盘在内的芯片约为1.0 mm 2.An 8-16 GHz wideband power amplifier was implemented based on the 0.18μm SiGe BiCMOS process.By using the peak-gain distribution technique,the bandwidth of the amplifier is expanded effectively without significantly deteriorating the available gain.The high output power is achieved by combining the output power of two PA cells using a transformer.The measured results show that the amplifier features a peak gain of 27 dB,and a 3-dB bandwidth of 6 GHz with a bandwidth ratio 54.5%.At the 3-dB bandwidth frequency ranges,the amplifier achieves a saturation output power from 17.5~20.5 dBm,while the power added efficiency is 12-18%.The whole chip including all testing pads is 1.0 mm 2.

关 键 词：BICMOS 宽带放大器 带宽拓展 增益分布 

分 类 号：TN433[电子电信—微电子学与固体电子学]