Ⅰ-Ⅱ-Ⅴ族基新型稀磁半导体磁电性质的研究进展  

Research progress of magnetoelectric properties of Ⅰ-Ⅱ-Ⅴ group-based novel diluted magnetic semiconductor

作　　者：李越 陈婷 叶燕 丁守兵 毋志民 LI Yue;CHEN Ting;YE Yan;DING Shoubing;WU Zhimin(Chongqing Key Laboratory of Optoelectronic Functional Materials,College of Physics and Electronic Engineering,Chongqing Normal University, Chongqing 401331, China)

机构地区：[1]重庆师范大学物理与电子工程学院光电功能材料重庆市重点实验室,重庆401331

出　　处：《功能材料》2021年第2期2057-2065,共9页Journal of Functional Materials

基　　金：重庆市自然科学基金面上资助项目(cstc2019jcyj-msxmX0251)。

摘　　要：稀磁半导体(Diluted Magnetic Semiconductor,DMS)是一种兼具半导体性与磁性且具有优异独特磁光、磁电功能的新型半导体材料。首先介绍了DMS的研究进展及其分类,重点阐述了Ⅰ-Ⅱ-Ⅴ族基DMS的磁电性质,在实验方面和理论计算方面所取得的研究进展,包括Ⅰ-Ⅱ-Ⅴ族DMS的制备方法、基本磁性质、磁性起源、输运性质及光学性质等。目前已经证实了某些DMS材料的铁磁性起源机制,一些新型DMS材料的最高居里温度(Curie temperature,Tc)已经可以与(Ga,Mn)As相比拟,并克服了传统稀磁半导体难以解决的问题。最后对Ⅰ-Ⅱ-Ⅴ族DMS的发展和应用前景进行了展望。The diluted magnetic semiconductor(DMS)is a new type of semiconductor material with both semiconductor and magnetic properties,which has distinctive magnetooptical and magnetoelectric functions.Firstly,we report the research progress of diluted magnetic semiconductors and their classification.Then the advances of magnetoelectric properties for theⅠ-Ⅱ-Ⅴ-based DMSs in experiment and theoretical calculation are mainly reviewed,including fabrication,magnetic,origin mechanism of ferromagnetism,magneto-transport and optical properties.The origin mechanism of ferromagnetism for some DMS materials has been confirmed,and the highest Curie temperature in some new DMS materials has been comparable to that of(Ga,Mn)As.Moreover,some difficult problems of traditional DMS have been overcome.Finally,we prospect the development and application prospect of theⅠ-Ⅱ-Ⅴ-based new diluted magnetic semiconductors.

关 键 词：新型稀磁半导体 Ⅰ-Ⅱ-Ⅴ族 磁电性质 T_(c)调控 

分 类 号：TB34[一般工业技术—材料科学与工程] O469[理学—凝聚态物理]