低占空比红外增强吸收的量子阱微柱阵列  

Quantum well micropillar arrays with low filling factor for enhanced infrared absorption

作　　者：叶新辉 谢天 夏辉[2] 陈熙仁[2] 李菊柱 张帅君 姜新洋 邓伟杰 王文静 李玉莹 刘伟伟 刘芳[1] 李天信 YE Xin-Hui;XIE Tian;XIA Hui;CHEN Xi-Ren;LI Ju-Zhu;ZHANG Shuai-Jun;JIANG Xin-Yang;DENG Wei-Jie;WANG Wen-Jing;LI Yu-Ying;LIU Wei-Wei;LIU Fang;LI Tian-Xin(School of Materials Science and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Mathematics and Science College,Shanghai Normal University,Shanghai 200234,China;School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China)

机构地区：[1]上海理工大学材料科学与工程学院,上海200093 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [3]上海师范大学数理学院,上海200234 [4]上海科技大学物质科学与技术学院,上海201210

出　　处：《红外与毫米波学报》2021年第1期1-6,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(11574336,11991063);中国科学院战略性先导科技专项(XDB43010200);上海市自然科学基金(19ZR1465700,14ZR1446200,18JC1420401)。

摘　　要：为了提高长波红外量子阱探测器的光耦合效率和信噪比,以8.7μm为中心波长,设计和制备了量子阱亚波长微柱阵列结构。与已经报道的金属或介质微腔结构不同,本文的微柱结构有源区包含50周期的量子阱/垒层,结合低至0.18的占空比,可望在增强吸收的同时显著抑制暗电流。红外光谱测量验证了制备的微柱阵列在8~9μm波段8%以内的低反射率特征,从而为高工作温度、高信噪比的长波红外探测提供了新方案。To improve the efficiency of optical coupling and the signal-to-noise ratio of long wavelength quantum well infrared detector(LW-QWIP),we designed and fabricated a quantum well subwavelength micropillar arrays structure targeting at 8.7μm central wavelength.Different from the reported metal or dielectric microcavity structures,each pillar contains 50 periods of quantum wells and barriers,which combined with the filling factor lower than 0.18 is expected to considerably suppress the dark current while enhancing the efficiency of light absorption.Infrared spectrum measurement discloses that the micropillar arrays reflect only 8%in the wavelength range of 8~9μm.Our study offers a practical scheme for sensitive infrared detection at high operation temperature.

关 键 词：量子阱红外探测器 亚波长微柱阵列 占空比 红外反射谱 

分 类 号：TN215[电子电信—物理电子学]