酞菁锌_(0.5)-酞菁铜_(0.5)混合膜晶体管的制备与光电特性分析  

Preparation and Characteristics Analysis of Photoelectric Transistor Using ZnPc_(0.5)-CuPc_(0.5) Mixed Films

作　　者：朱敏 栗强 ZHU Min;LI Qiang(Key Laboratory of Engineering Dielectrics and Its Application, Department of Electronic Science and Technology, School of Applied Science, Harbin University of Science and Technology, Harbin 150080, China)

机构地区：[1]哈尔滨理工大学理学院(教育部工程电介质重点实验室),黑龙江哈尔滨150080

出　　处：《哈尔滨理工大学学报》2020年第6期17-22,共6页Journal of Harbin University of Science and Technology

基　　金：国家自然科学基金(61201075).

摘　　要：以ZnPc和CuPc混合物作为有机半导体光敏材料,制备了具有Cu/ZnPc-CuPc/Al/ZnPc-CuPc/ITO 5层垂直结构的有机薄膜晶体管。制备过程采用真空蒸镀及磁控溅射工艺。用波长335 nm、625 nm和700 nm的光照射晶体管时,晶体管工作电流有明显放大,其中波长700 nm光照射时电流放大倍数最大。当V_(b)=0 V时,工作电流受光照影响最为明显。ZnPc/CuPc混合膜薄膜晶体管在波长335 nm光照射下的光电敏感度最高。将混合材料的有机薄膜晶体管与ZnPc薄膜晶体管及CuPc薄膜晶体管的性能进行比较,得知ZnPc/CuPc混合膜晶体管可利用两种材料的光敏特性,用不同波长的光进行照射,器件均存在较高的光电敏感度,说明该器件可以用于宽波带的光信号检测。An organic thin film transistor having a five-layer vertical structure of Cu/ZnPc-CuPc/Al/ZnPc-CuPc/ITO was prepared using a mixture of ZnPc and CuPc as an organic semiconductor photosensitive material.The preparation process uses vacuum evaporation and magnetron sputtering processes,and is completed by a multifunctional coating machine.When the transistor is irradiated with light having a wavelength of 335 nm,625 nm,and 700 nm,the transistor's operating current is significantly amplified,and the current amplification factor is the largest when the wavelength is 700 nm.When V_(b)=0 V,the working current is most significantly affected by light.The ZnPc/CuPc mixed film thin film transistor has the highest photoelectric sensitivity under the irradiation of 335 nm light.Comparing the performance of organic thin-film transistors with mixed materials with ZnPc thin-film transistors and CuPc thin-film transistors,we know that ZnPc/CuPc mixed-film transistors can use the photosensitivity characteristics of two materials and irradiate with different wavelengths of light.The devices are relatively high the photoelectric sensitivity of the device indicates that the device can be used for optical signal detection in a wide band.

关 键 词：酞菁锌/酞菁铜混合膜 有机薄膜晶体管 垂直结构 光电灵敏度 

分 类 号：TN321.5[电子电信—物理电子学]