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作 者:无 无(ON Sem iconductor)
机构地区:[1]安森美半导体
出 处:《变频器世界》2021年第1期98-100,共3页The World of Inverters
摘 要:在许多应用中,电气隔离是一项重要的要求,特别是在涉及高功率电路和低功率电路的地方,以及高边和低边接地需要分开的地方。尽管隔离技术已经存在多年了,但已演变以满足新应用的需求,如可再生能源的逆变器、工业自动化、储能以及电动和混合动力汽车的逆变器和正温系数(PTC)加热器,通常使用基于IGBT技术的功率开关来实现这些应用的电源、转换电路。功率开关将配置为复杂的半桥和全桥拓扑,必须使用具有高驱动电流的门极驱动器高效地开关。此处可以选择分立门极驱动器电路,但通常集成驱动器的能效要高于分立门极驱动器电路。特别是内置有片上电隔离的高驱动电流门极驱动器具有进一步的优势,例如功率密度提高、传播延迟更短、信号完整性更好以及工作温度范围更宽。Electrical isolation is an important requirement in many applications,specifically where both high and low power circuits are involved,and where high side and low side grounds need to be kept separate.Although it has been around for many years,isolation technology has evolved in order to meet the demands coming from new applications,such as inverters for renewable energy,industrial automation,energy storage,and inverters and PTC heaters for electric and hybrid vehicles.The power conversion circuits for these applications will typically be realized using power switches,often based on IGBT technology.The power switches will be configured in complex halfbridge and full-bridge topologies that must be switched ON/OFF efficiently using gate drivers that have high drive current.Discrete gate driver circuits are an option here but often times an integrated driver is more efficient than discrete gate driver circuits.Specifically,the high drive current gate drivers that have on-chip galvanic isolation built in offers further advantages of increased power density,shorter propagation delays,better signal integrity and wider operating temperatures.
关 键 词:IGBT/MOSFET 绝缘栅驱动器 数字隔离驱动器 米勒平台 安森美半导体
分 类 号:TN386.2[电子电信—物理电子学]
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