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作 者:程向群 李晓峰[2] 王亚斌[2] 富玉 王钢 CHENG Xiangqun;LI Xiaofeng;WANG Yabin;FU Yu;WANG Gang(Beijing Xinli Machinery Co.,Ltd.,Beijing 100039,China;School of Mechatronical Engineering,Beijing Institute of Technology,Beijing 100081,China;Jilin Jiangji Special Industry Co.,Ltd.,Jilin 132021,Jilin,China)
机构地区:[1]北京新立机械有限责任公司,北京100039 [2]北京理工大学机电学院,北京100081 [3]吉林江机特种工业有限公司,吉林吉林132021
出 处:《兵工学报》2020年第S02期234-240,共7页Acta Armamentarii
基 金:国家自然科学基金项目(11372047)。
摘 要:触发引信随弹体碰击和侵彻目标过程中经历的大瞬态高过载可能导致电容承受的应力急剧增加,严重情况将造成结构损伤,应力的瞬变带来电容参数的漂移,进而影响到与电容相关的电路单元。针对高瞬态冲击环境下带电电容参数漂移问题,基于高速充放电原理提出一种高重复频率的电容参数测试方法。利用分离式霍普金森杆试验装置作为加载途径,设计高瞬态加载过程中测试电容参数漂移的系统,进行多组高动态加载试验,峰值过载由1.8×10^(4) g提高至16.8×10^(4) g.观测到未开裂电容和开裂电容在冲击过程中的充放电现象,通过数据分析获得电容应变、冲击过载和电学参数变化历程。数据曲线显示:在应力波首次通过电容时,电容容值减小,容值减小幅度因冲击强度而有所区别;该参数漂移现象可能导致带电电容极板的电压升高。During the course of the projectile hitting and penetrating a target,the impact fuze will be subjected by large transients and high overloads,which cause a sharp increase in stress on capacitor and serious structural damage.The drift of capacitance parameter caused by the transient of stress further affects the circuit unit related to the capacitance.For this problem,a high repetition frequency capacitor parameter test method is proposed based on the principle of high-speed charge and discharge.A split Hopkinson bar test device is used as the loading path.A test system for testing capacitance parameter drift during high transient loading was designed,and multiple sets of highly dynamic loading tests were performed,and the peak overload was increased from 18000 g to 168000 g.The charging and discharging phenomena of the cracked and uncracked capacitors during the shock loading were observed.The change processes of capacitive strain,shock overload,and electrical parameter were obtained through data analysis.The data curve shows that,when the stress wave first passes through the capacitor,the capacitance value of the capacitor shifts,and the change in capacitance value varies due to strength.This parameter drift phenomenon may cause the voltage of the charged capacitor plate to rise.
关 键 词:多层陶瓷电容 高瞬态冲击 参数漂移 电容容值测试 霍普金森杆
分 类 号:TJ430.2[兵器科学与技术—火炮、自动武器与弹药工程]
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