Novel fast-switching LIGBT with P-buried layer and partial SOI  

作　　者：Haoran Wang Baoxing Duan Licheng Sun Yintang Yang 王浩然;段宝兴;孙李诚;杨银堂(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China)

机构地区：[1]Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

出　　处：《Chinese Physics B》2021年第2期462-466,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2015CB351906);the Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017)。

摘　　要：A novel silicon-on-insulator lateral insulated gate bipolar transistor(SOI LIGBT)is proposed in this paper.The proposed device has a P-type buried layer and a partial-SOI layer,which is called the BPSOI-LIGBT.Due to the electric field modulation effect generated by the P-type buried layer and the partial-SOI layer,the proposed structure generates two new peaks in the surface electric field distribution,which can achieve a smaller device size with a higher breakdown voltage.The smaller size of the device is beneficial to the fast switching.The simulation shows that under the same size,the breakdown voltage of the BPSOI LIGBT is 26%higher than that of the conventional partial-SOI LIGBT(PSOI LIGBT),and 84%higher than the traditional SOI LIGBT.When the forward voltage drop is 2.05 V,the turn-off time of the BPSOI LIGBT is 71%shorter than that of the traditional SOI LIGBT.Therefore,the proposed BPSOI LIGBT has a better forward voltage drop and turn-off time trade-off than the traditional SOI LIGBT.In addition,the BPSOI LIGBT effectively relieves the self-heating effect of the traditional SOI LIGBT.

关 键 词：P-type buried layer breakdown voltage electric field modulation turn-off time 

分 类 号：TN322.8[电子电信—物理电子学]