Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing  

作　　者：Shu-Xing Zhou Li-Kun Ai Ming Qi An-Huai Xu Jia-Sheng Yan Shu-Sen Li Zhi Jin 周书星;艾立鹍;齐鸣;徐安怀;颜家圣;李树森;金智(Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science,Xiangyang 441053,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Hubei Key Laboratory of High Power Semiconductor Technology,Xiangyang 441021,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science,Xiangyang 441053,China [2]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [3]Hubei Key Laboratory of High Power Semiconductor Technology,Xiangyang 441021,China [4]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

出　　处：《Chinese Physics B》2021年第2期472-475,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11705277 and 61434006);the Project of Hubei University of Arts and Science(Grant No.XK2019053)。

摘　　要：Carbon-doped In Ga As Bi films on In P:Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped In Ga As Bi films were characterized by Van der Pauw-Hall measurement and transmission line method(TLM)with and without rapid thermal annealing(RTA).It was found that the specific contact resistance decreases gradually with the increase of carrier concentration.The electron concentration exhibits a sharp increase,and the specific contact resistance shows a noticeable reduction after RTA.With RTA,the In Ga As Bi film grown under CBr4 supply pressure of 0.18 Torr exhibited a high electron concentration of 1.6×10^(21) cm^(-3) and achieved an ultra-low specific contact resistance of 1×10^(-8)Ω·cm^(2),revealing that contact resistance depends greatly on the tunneling effect.

关 键 词：InGaAsBi electrical properties contact resistance rapid thermal annealing 

分 类 号：TN304.055[电子电信—物理电子学]