Snapback-free shorted anode LIGBT with controlled anode barrier and resistance  

作　　者：Shun Li Jin-Sha Zhang Wei-Zhong Chen Yao Huang Li-Jun He Yi Huang 李顺;张金沙;陈伟中;黄垚;贺利军;黄义(College of Electronics Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]College of Electronics Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China [2]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

出　　处：《Chinese Physics B》2021年第2期557-562,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61604027 and 61704016);the Fund from Chongqing Technology Innovation and Application Development(Key Industry Research and Development),China(Grant No.cstc2018jszx-cyzd0646)。

摘　　要：A novel shorted anode lateral-insulated gate bipolar transistor(SA LIGBT)with snapback-free characteristic is proposed and investigated.The device features a controlled barrier V_(barrier)and resistance R_(SA)in anode,named CBR LIGBT.The electron barrier is formed by the P-float/N-buffer junction,while the anode resistance includes the polysilicon layer and N-float.At forward conduction stage,the V_(barrier)and R_(SA)can be increased by adjusting the doping of the P-float and polysilicon layer,respectively,which can suppress the unipolar mode to eliminate the snapback.At turn-off stage,the low-resistance extraction path(N-buffer/P-float/polysilicon layer/N-float)can quickly extract the electrons in the N-drift,which can effectively accelerate the turn-off speed of the device.The simulation results show that at the same V_(on) of 1.3 V,the E_(off)of the CBR LIGBT is reduced by 85%,73%,and 59.6%compared with the SSA LIGBT,conventional LIGBT,and TSA LIGBT,respectively.Additionally,at the same Eoffof 1.5 m J/cm^(2),the CBR LIGBT achieves the lowest V_(on) of 1.1 V compared with the other LIGBTs.

关 键 词：shorted anode lateral-insulated gate bipolar transistor SNAPBACK BARRIER trade-off 

分 类 号：TN322.8[电子电信—物理电子学]