Microstructure,optical,and photoluminescence properties ofβ-Ga_(2)O_(3)films prepared by pulsed laser deposition under different oxygen partial pressures  

作　　者：Rui-Rui Cui Jun Zhang Zi-Jiang Luo Xiang Guo Zhao Ding Chao-Yong Deng 崔瑞瑞;张俊;罗子江;郭祥;丁召;邓朝勇(Power Semiconductor Device Reliability Center of the Ministry of Education,Department of Electronic Science,College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;College of Computer and Information Engineering,Guizhou University of Commerce,Guiyang 550014,China)

机构地区：[1]Power Semiconductor Device Reliability Center of the Ministry of Education,Department of Electronic Science,College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China [2]College of Computer and Information Engineering,Guizhou University of Commerce,Guiyang 550014,China

出　　处：《Chinese Physics B》2021年第2期578-583,共6页中国物理B（英文版）

基　　金：Project supported by the Guizhou Provincial Science and Technology Planning Project,China(Grant No.2018-5781);the National Natural Science Foundation of China(Grant No.51762010);the Guizhou Provincial Science and Technology Foundation,China(Grant Nos.2020-1Y021 and 2020-1Y271);the Guizhou Provincial High-level Innovative Talents,China(Grant No.2018-4006)。

摘　　要：Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga_(2)O_(3)film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_(Ga)^(2-)at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga_(2)O_(3)film-based electronic devices.

关 键 词：β-Ga_(2)O_(3) pulsed laser deposition band gap PHOTOLUMINESCENCE 

分 类 号：TN249[电子电信—物理电子学] O484.4[理学—固体物理]