放电等离子体烧结六硼化镧(LaB_(6))及其工艺研究  

Processes of LaB_(6) Cathode Fabricated by Spark Plasma Sintering

作　　者：马飞文 王吉林[1,2,3] 廖和杰 郑国源 龙飞[1,2,3] 邹正光 MA Feiwen;WANG Jiling;LIAO Hejie;ZHENG Guoyuan;LONG Fei;ZOU Zhengguang(School of Materials Science and Engineering,Guilin 541004,China;Key Laboratory of Nonferrous Materials and New Processing Technology of Ministry of Education,Guilin 541004,China;Collaborative Innovation Center for Exploration of Hidden Nonferrous Metal Deposits and Development of New Materials in Guangxi,Guilin University of Technology,Guilin 541004,China)

机构地区：[1]桂林理工大学材料科学与工程学院,桂林541004 [2]有色金属及材料加工新技术教育部重点实验室,桂林541004 [3]广西有色金属隐伏矿床勘查及材料开发协同创新中心,桂林541004

出　　处：《中国陶瓷》2021年第2期17-23,共7页China Ceramics

基　　金：广西自然科学基金面上项目(2018GXNSFAA050032);有色金属及材料加工新技术教育部重点实验室开放基金项目(19AA-14);广西科技基地和人才专项(AD19245175)。

摘　　要：以氯化镧和硼氢化钾为原料,在900℃保温3 h制备六硼化镧(LaB_(6))超细粉末,然后采用放电等离子体烧结(SPS)制备LaB_(6)多晶体。采用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、紫外光电子能谱仪(UPS)对样品的物相、宏观形貌和微观结构进行表征。研究了烧结保温时间、烧结压力、烧结温度和高温段烧结速率对LaB_(6)多晶体致密度的影响。结果表明,最佳烧结工艺参数为烧结温度2000℃,压力55 MPa,保温时间10 min,高温段升温速率40℃/min。该工艺条件下制备的LaB_(6)多晶体致密度达98.13%,其逸出功为2.63 eV。LaB_(6) powders were prepared via heating treatment of 900℃ for 3 h using lanthanum chloride and potassium borohydride as raw materials.The LaB_(6) polycry stals were prepared by spark plasma sintering technique.X-ray diffractometer(XRD),field emission scanning electron microscope(FESEM),and ultraviolet photoelectron spectrometer(UPS)were used to characterize the as-synthesized samples.The effects of sintering holding time,sintering pressure,sintering temperature and high temperature heating rate on the density of LaB_(6) polycrystals were studied.The best technological parameters were obtained when the temperature,pressure,holding time and high temperature heating rate were 2000℃,55 MPa,10 min and 40℃/min,respectively.Under the above conditions,the densification of LaB_(6) polycry stals fabricated in this sintering conditions was 98.13%and the work function of the sintered body was 2.63 eV.

关 键 词：六硼化镧 多晶 SPS烧结 致密化 

分 类 号：TQ174.758.12[化学工程—陶瓷工业]