异质结AlGaAs/GaAs PIN二极管结构的设计及分析  

Design and Analysis of a Heterojunction AlGaAs/GaAs PIN Diode Structure

作　　者：刘莉 李彩艳 张祁莲 孙晓玮[1] 孙浩[1] Liu Li;Li Caiyan;Zhang Qilian;Sun Xiaowei;Sun Hao(Key Laboratory of Terahertz Solid-State Technology,Shanghai Institute of Microsgystem and Information Technology,Ch inese Academy of Sciences,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China.)

机构地区：[1]中国科学院上海微系统与信息技术研究所,中国科学院太赫兹固态技术重点实验室,上海200050 [2]中国科学院大学材料与光电研究中心,北京100049

出　　处：《激光与光电子学进展》2020年第23期262-267,共6页Laser & Optoelectronics Progress

基　　金：中国科学院科技服务网络计划。

摘　　要：设计了一种应用于毫米波开关及限幅器的异质结AlGaAs/GaAs PIN二极管材料结构,接着对影响二极管性能的两个主要因素(Al掺杂量和I层厚度)进行分析和优化,然后采用分子束外延与半导体工艺流片制备出了验证器件。对该器件进行测试,测试结果表明,所制备的PIN二极管的开启电压为1.06 V,击穿电压为26 V;在1~40 GHz频率范围内,该二极管的插入损耗为1 dB左右,隔离度为12 dB(频率为30 GHz时)。所制备二极管可应用于毫米波开关和限幅器电路中。Herein,a heterojunction AlGaAs/GaAs PIN diode material structure for a millimeter wave switch and limiter applications is designed,and the two main factors(i.e.,the Al doping concentration and I-layer thickness)that influence the performance of the diode are analyzed and optimized.Furthermore,the verification device is fabricated via molecular beam epitaxy and semiconductor process flow sheet technique.We test the device,and the test results show that the opening voltage of the PIN diode is 1.06 V,and the breakdown voltage is 26.The insertion loss of the diode is approximately 1 dB and the isolation degree is 12 dB(when the frequency is 30 GHz),both of which are observed in the frequency range of 1-40 GHz.Thus,the designed device is suitable for millimeter wave switch and limiter circuits.

关 键 词：材料 PIN二极管 异质结 Ⅰ-Ⅴ特性 S参数 

分 类 号：TN312.4[电子电信—物理电子学]