Energy band adjustment of 808 nm GaAs laser power converters via gradient doping  

作　　者：Yingjie Zhao Shan Li Huixue Ren Shaojie Li Peide Han 

机构地区：[1]State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2021年第3期73-79,共7页半导体学报（英文版）

基　　金：This work was supported by the National Key R&D Program of China(No.2018YFB1500500);also supported by Ally Fund of Chinese Academy of Sciences(No.Y072051002).

摘　　要：The gradient doping regions were employed in the emitter layer and the base layer of GaAs based laser power converters(LPCs).Silvaco TCAD was used to numerically simulate the linear gradient doping and exponential gradient doping structure,and analyze the transport process of photogenerated carriers.Energy band adjustment via gradient doping improved the separation and transport efficiency of photogenerated carriers and reduced the total recombination rate of GaAs LPCs.Compared with traditional structure of LPCs,the photoelectric conversion efficiency of LPCs with linear and exponential gradient doping structure were improved from 52.7%to 57.2%and 57.7%,respectively,under 808 nm laser light at the power density of 1 W/cm^(2).

关 键 词：gradient doping laser power converters(LPCs) energy band adjustment numerical simulation 

分 类 号：TM724[电气工程—电力系统及自动化] TN249[电子电信—物理电子学]