A review of silicon-based wafer bonding processes,an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers  

作　　者：Shuyu Bao Yue Wang Khaw Lina Li Zhang Bing Wang Wardhana Aji Sasangka Kenneth Eng Kian Lee Soo Jin Chua Jurgen Michel Eugene Fitzgerald Chuan Seng Tan Kwang Hong Lee 

机构地区：[1]Low Energy Electronic Systems(LEES),Singapore-MIT Alliance for Research and Technology(SMART),Singapore 138602,Singapore [2]School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510006,China [3]Department of Electrical and Computer Engineering,National University of Singapore,Singapore 117576,Singapore [4]Materials Research Laboratories,Massachusetts Institute of Technology,Cambridge,MA,02139,USA [5]Department of Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge,MA 02139,USA [6]School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore

出　　处：《Journal of Semiconductors》2021年第2期80-99,共20页半导体学报（英文版）

摘　　要：The heterogeneous integration of III-V devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and optical systems for novel applications,such as HEMT or LED with integrated control circuitry.For heterogeneous integration,direct wafer bonding(DWB)techniques can overcome the materials and thermal mismatch issues by directly bonding dissimilar materials systems and device structures together.In addition,DWB can perform at wafer-level,which eases the requirements for integration alignment and increases the scalability for volume production.In this paper,a brief review of the different bonding technologies is discussed.After that,three main DWB techniques of single-,double-and multi-bonding are presented with the demonstrations of various heterogeneous integration applications.Meanwhile,the integration challenges,such as micro-defects,surface roughness and bonding yield are discussed in detail.

关 键 词：MATERIAL thin film integrated circuit 

分 类 号：TN305[电子电信—物理电子学]